KIA 28A,500V N-CHANNEL MOSFET
SEMICONDUCTORS
15507595280 QQ 2880195519
1.Description
28N50H
This Power MOSFET is produced using KIA advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology.
.
2. Features
RDS(on)=0.17Ω @ VGS=10V Low gate charge ( typical 102nC) Fast switching capability Avalanche energy specified Improved dv/dt capability
3. Pin configuration
Pin 1 2 3
1 of 5
Function Gate Drain
Source
Rev 1.0 JAN 2014
KIA
SEMICONDUCTORS
28A,500V N-CHANNEL MOSFET
28N50H
4. Absolute maximum ratings
Parameter
(TC= 25 ºC , unless otherwise specified)
Symbol
Ratings
Units
Drain-source voltage Gate-source voltage
VDSS VGSS
500 +30
V V
Drain current continuous
TC=25ºC TC=100ºC
Drain current pulsed (note1)
Avalanche energy
Repetitive (note1) Single pulse (note2)
Peak diode recovery dv/dt (note 3)
ID
IDP EAR EAS dv/dt
28 16.8 112 43 1960 4.5
A A A mJ mJ V/ns
Total power dissipation TC=25ºC derate above 25ºC
PD
479 W 3.83 W/ºC
Junction temperature
TJ
Storage temperature
TSTG
*Drain current limited by maximum junction temperature.
+150 -55~+150
ºC ºC
5. Thermal characteristics
Parameter Thermal resistance,junction-ambient Thermal resistance,case-to-sink typ. Thermal resistance,Junction-case
Symbol
RthJA RthCS RthJC
Ratings
62.5 0.5 0.26
Units ºC/W
2 of 5
Rev 1.0 JAN 2014
KIA
SEMICONDUCTORS
28A,500V N-CHANNEL MOSFET
28N50H
6. Electrical characteristics
Parameter Off characteristics Drain-source breakdown voltage
Zero gate voltage drain current
Gate-body leakage current
Forward Reverse
Breakdown voltage temperature coefficient
On characteristics
Gate threshold voltage
Static drain-source on-resistance
Forward transconductance
Dynamic characteristics
Input capacitance Output capacitance Reverse transfer capacitance Switching characteristics Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge Drain-source diode characteristics Drain-source diode forward voltage Continuous drain-source current Pulsed drain-source current
Reverse recovery time
Reverse recovery charge
Symbol
BVDSS IDSS
IGSS △BVDSS/△TJ
VGS(th) RDS(on)
gFS
Ciss Coss Crss
td(on) tr
td(off) tf Qg
Qgs Qgd
VSD ISD ISM trr Qrr
(TJ=25°C,unless otherwise specified)
Conditions
Min Typ Max Units
VGS=0V,ID=250μA 500 - - V
VDS=500V ,VGS=0V
-
-
1 μA
VDS=400V ,TC=125 ºC - - 10 μA
VGS=30V,VDS=0V - - 100 nA
VGS=-30V,VDS=0V - - -100 nA
ID=250μA
- 0.6 - V/°C
VDS=VGS, ID=250μA VDS=10V,ID=14A VDS=40V,ID=14A (note4)
2.0 - 0.16
- 26
4.0 0.2
-
V Ω
S
VDS=25V,VGS=0V, f=1MHz
VDD=250V,ID=28A, RG=25Ω (note4,5)
VDS=400V,ID=28A , VGS=10V (note4,5)
VGS=0V,ID=28A
ISD=28A dlSD/dt=100A/μs
(note4)
- 4085 - 474 - 60
-
pF pF pF
- 45 - ns
- 87 - ns
- 355 -
ns
- 130 -
ns
- 102 - nC
- 43 - nC
- 20 - nC
- - 1.4 V
- - 28 A - - 112 A
- 656 -
ns
- 11.5 - μC
Note:1 Repetitive rating: pulse width limited by maximum junction temperature
2. L=5mH, IAS=28A,VDD=50V,RG=25Ω,staring TJ=25ºC 3. ISD<28A, di/dt<100A/μs, VDD