DatasheetsPDF.com

KIA28N50H Dataheets PDF



Part Number KIA28N50H
Manufacturers KIA
Logo KIA
Description N-CHANNEL MOSFET
Datasheet KIA28N50H DatasheetKIA28N50H Datasheet (PDF)

KIA 28A,500V N-CHANNEL MOSFET SEMICONDUCTORS 15507595280 QQ 2880195519 1.Description 28N50H This Power MOSFET is produced using KIA advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bri.

  KIA28N50H   KIA28N50H


Document
KIA 28A,500V N-CHANNEL MOSFET SEMICONDUCTORS 15507595280 QQ 2880195519 1.Description 28N50H This Power MOSFET is produced using KIA advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology. . 2. Features  RDS(on)=0.17Ω @ VGS=10V  Low gate charge ( typical 102nC)  Fast switching capability  Avalanche energy specified  Improved dv/dt capability 3. Pin configuration Pin 1 2 3 1 of 5 Function Gate Drain Source Rev 1.0 JAN 2014 KIA SEMICONDUCTORS 28A,500V N-CHANNEL MOSFET 28N50H 4. Absolute maximum ratings Parameter (TC= 25 ºC , unless otherwise specified) Symbol Ratings Units Drain-source voltage Gate-source voltage VDSS VGSS 500 +30 V V Drain current continuous TC=25ºC TC=100ºC Drain current pulsed (note1) Avalanche energy Repetitive (note1) Single pulse (note2) Peak diode recovery dv/dt (note 3) ID IDP EAR EAS dv/dt 28 16.8 112 43 1960 4.5 A A A mJ mJ V/ns Total power dissipation TC=25ºC derate above 25ºC PD 479 W 3.83 W/ºC Junction temperature TJ Storage temperature TSTG *Drain current limited by maximum junction temperature. +150 -55~+150 ºC ºC 5. Thermal characteristics Parameter Thermal resistance,junction-ambient Thermal resistance,case-to-sink typ. Thermal resistance,Junction-case Symbol RthJA RthCS RthJC Ratings 62.5 0.5 0.26 Units ºC/W 2 of 5 Rev 1.0 JAN 2014 KIA SEMICONDUCTORS 28A,500V N-CHANNEL MOSFET 28N50H 6. Electrical characteristics Parameter Off characteristics Drain-source breakdown voltage Zero gate voltage drain current Gate-body leakage current Forward Reverse Breakdown voltage temperature coefficient On characteristics Gate threshold voltage Static drain-source on-resistance Forward transconductance Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Switching characteristics Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge Drain-source diode characteristics Drain-source diode forward voltage Continuous drain-source current Pulsed drain-source current Reverse recovery time Reverse recovery charge Symbol BVDSS IDSS IGSS △BVDSS/△TJ VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD ISD ISM trr Qrr (TJ=25°C,unless otherwise specified) Conditions Min Typ Max Units VGS=0V,ID=250μA 500 - - V VDS=500V ,VGS=0V - - 1 μA VDS=400V ,TC=125 ºC - - 10 μA VGS=30V,VDS=0V - - 100 nA VGS=-30V,VDS=0V - - -100 nA ID=250μA - 0.6 - V/°C VDS=VGS, ID=250μA VDS=10V,ID=14A VDS=40V,ID=14A (note4) 2.0 - 0.16 - 26 4.0 0.2 - V Ω S VDS=25V,VGS=0V, f=1MHz VDD=250V,ID=28A, RG=25Ω (note4,5) VDS=400V,ID=28A , VGS=10V (note4,5) VGS=0V,ID=28A ISD=28A dlSD/dt=100A/μs (note4) - 4085 - 474 - 60 - pF pF pF - 45 - ns - 87 - ns - 355 - ns - 130 - ns - 102 - nC - 43 - nC - 20 - nC - - 1.4 V - - 28 A - - 112 A - 656 - ns - 11.5 - μC Note:1 Repetitive rating: pulse width limited by maximum junction temperature 2. L=5mH, IAS=28A,VDD=50V,RG=25Ω,staring TJ=25ºC 3. ISD<28A, di/dt<100A/μs, VDD


28N50H KIA28N50H 2SC4342


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)