2SC5024
Silicon NPN Epitaxial
Application
High frequency amplifier
Features
• Excellent high frequency characteristics ...
2SC5024
Silicon
NPN Epitaxial
Application
High frequency amplifier
Features
Excellent high frequency characteristics fT = 300 MHz typ
High breakdown voltage and low output capacitance VCEO = 200 V, Cob = 5.0 pF typ
Suitable for wide band video amplifier Complimentary pair of 2SA1889
TO–126FM
123
1. Emitter 2. Collector 3. Base
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Rating
Unit
———————————————————————————————————————————
Collector to base voltage
VCBO
200 V
———————————————————————————————————————————
Collector to emitter voltage
VCEO
200 V
———————————————————————————————————————————
Emitter to base voltage
VEBO
4
V
———————————————————————————————————————————
Collector current
IC 0.2 A
———————————————————————————————————————————
Collector peak current
ic(peak)
0.5
A
———————————————————————————————————————————
Collector power dissipation
PC
1.4 W
———————————————————————————————————————————
Collector power dissipation
PC*1
8W
———————————————————————————————————————————
Junction temperature
Tj 150 °C
———————————————————————————————————————————
Storage temperature
Tstg
–55 to +150
°C
———————————————————————————————————————————
Note: 1. Value at TC = 25°C.
2SC5024
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min Typ Max Unit Test Conditions
———————————————————————————————————————————
Collector to base
V(BR)CBO 200 —
—
V IC = 10 µA,
breakdown voltage
IE = 0
———————————————————————————————————————————...