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4D5N60F Datasheet, Equivalent, KHB4D5N60F.

KHB4D5N60F

KHB4D5N60F

 

 

 

Part 4D5N60F
Description KHB4D5N60F
Feature SEMICONDUCTOR TECHNICAL DATA KHB4D5N60P /F N CHANNEL MOS FIELD EFFECT TRANSISTO R General Description This planar stri pe MOSFET has better characteristics, s uch as fast switching time, low on resi stance, low gate charge and excellent a valanche characteristics.
It is mainly suitable for switching mode power suppl ies.
FEATURES VDSS(Min.
)= 600V, ID= 4.
5 A Drain-Source ON Resistance : RDS(ON)= 2.
5 @VGS =10V Qg(typ.
) =17nC MAXIMUM R ATING (Tc=25 ) CHARACTERISTIC RATING SYMBOL UNIT KHB4D5N60P KHB4D5N60F D rain-Source Voltage Gate-Source Voltag e @TC=25 Drain Current @TC=100 Pulsed (Note1) Single .
Manufacture KEC
Datasheet
Download 4D5N60F Datasheet
Part 4D5N60F
Description KHB4D5N60F
Feature SEMICONDUCTOR TECHNICAL DATA KHB4D5N60P /F N CHANNEL MOS FIELD EFFECT TRANSISTO R General Description This planar stri pe MOSFET has better characteristics, s uch as fast switching time, low on resi stance, low gate charge and excellent a valanche characteristics.
It is mainly suitable for switching mode power suppl ies.
FEATURES VDSS(Min.
)= 600V, ID= 4.
5 A Drain-Source ON Resistance : RDS(ON)= 2.
5 @VGS =10V Qg(typ.
) =17nC MAXIMUM R ATING (Tc=25 ) CHARACTERISTIC RATING SYMBOL UNIT KHB4D5N60P KHB4D5N60F D rain-Source Voltage Gate-Source Voltag e @TC=25 Drain Current @TC=100 Pulsed (Note1) Single .
Manufacture KEC
Datasheet
Download 4D5N60F Datasheet

4D5N60F

4D5N60F
4D5N60F

4D5N60F

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