KHB4D5N60F2

SEMICONDUCTOR TECHNICAL DATA General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switching mode power supplies. FEATURES VDSS(Min.)= 600V, ID= 4.5A Drain-Source ON Resistance : RDS(ON)=2.5 @VGS =10V Qg(typ.) =17nC MAXIMUM RATING (Tc=25 ) RATING CHARACTERISTIC SYMBOL KHB4D5N60F UNIT KHB4D5N60P KHB4D5N60F2 Drain-Source Voltage Gate-Source Voltage @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25 Derate above25 Maximum Junction Temperature Storage Temperature Range Thermal Characteristics VDSS VGSS ID IDP EAS EAR dv/dt PD Tj Tstg 600 30 4.5 4.5* 2.8 2.8* 18 18* 260 10.6 4.5 106 36 0.85 0.29 150 -55 150 V V A mJ mJ V/ns W W/ Thermal Resistance, Junction-to-Case RthJC 1.18 Thermal Resistance, Case-to-Sink RthCS 0.5 Thermal Resistance, Junction-toAmbient RthJA 62.5 * : Drain current limited by maximum junction temperature. 3.47 /W - /W 62.5 /W PIN CONNECTION D G 2007. 5. 10 S Revision No : 0 Q KHB4D5N60P/F/F2 N CHANNEL MOS FIELD EFFECT TRANSISTOR KHB4D5N60P A E I K M D NN F G B Q L J O C P H 123 1. GATE 2. DRAIN 3. SOURCE DIM MILLIMETERS A 9.9 +_ 0.2 B 15.95 MAX C 1.3+0.1/-0.05 D 0.8 +_ 0.1 E 3.6 +_ 0.2 F 2.8 +_ 0.1 G 3.7 H 0.5+0.1/-0.05 I 1.5 J 13.08 +_ 0.3 ...