KHB4D0N80P1

SEMICONDUCTOR TECHNICAL DATA General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switch mode power supplies. FEATURES VDSS=800V, ID=4A Drain-Source ON Resistance : RDS(ON)=3.6 @VGS = 10V Qg(typ.)=25nC KHB4D0N80P1/F1/F2 N CHANNEL MOS FIELD EFFECT TRANSISTOR KHB4D0N80P1 A E I K M D NN F G B Q L J O C P H 123 1. GATE 2. DRAIN 3. SOURCE DIM A B C D E F G H I J K L M N O P Q MILLIMETERS 9.9 +_ 0.2 15.95 MAX 1.3+0.1/-0.05 0.8 +_ 0.1 3.6 +_ 0.2 2.8 +_ 0.1 3.7 0.5+0.1/-0.05 1.5 13.08 +_ 0.3 1.46 1.4 +_ 0.1 1.27 +_ 0.1 2.54 +_ 0.2 4.5 +_ 0.2 2.4 +_ 0.2 9.2 +_ 0.2 MAXIMUM RATING (Tc=25 ) RATING CHARACTERISTIC SYMBOL KHB4D0N80F1 UNIT KHB4D0N80P1 KHB4D0N80F2 Drain-Source Voltage Gate-Source Voltage Drain Current @TC=25 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25 Derate above25 VDSS VGSS ID IDP EAS EAR dv/dt PD 800 30 4.0 4.0* 16 16* 460 13 4.0 130 43 1.04 0.34 Maximum Junction Temperature Storage Temperature Range Thermal Characteristics Tj Tstg 150 -55 150 Thermal Resistance, Junction-to-Case RthJC 0.96 Thermal Resistance, Junction-toAmbient RthJA 62.5 * : Drain current limited by maximum junction temperature. 2.9 62.5 V V A mJ mJ V/ns W W/ /W /W PIN CONNECTION D G ...