SEMICONDUCTOR
TECHNICAL DATA
KHB4D0N65P/F
N CHANNEL MOS FIELD EFFECT TRANSISTOR
General Description
This planar stripe...
SEMICONDUCTOR
TECHNICAL DATA
KHB4D0N65P/F
N CHANNEL MOS FIELD EFFECT
TRANSISTOR
General Description
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switch mode power supplies.
FEATURES VDSS=650V, ID=4A Drain-Source ON Resistance : RDS(ON)=3.0 @VGS = 10V Qg(typ.)=20nC
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
RATING
SYMBOL
UNIT
KHB4D0N65P KHB4D0N65F
Drain-Source Voltage
Gate-Source Voltage
Drain Current
@TC=25 Pulsed (Note1)
Single Pulsed Avalanche Energy (Note 2)
Repetitive Avalanche Energy (Note 1)
Peak Diode Recovery dv/dt (Note 3)
Drain Power Dissipation
Tc=25 Derate above25
VDSS VGSS
ID IDP EAS EAR
dv/dt
PD
650 30
4.0 4.0* 16 16*
260
10.6
4.5 106 36 0.85 0.29
V V
A
mJ mJ V/ns W W/
Maximum Junction Temperature Storage Temperature Range
Tj Tstg
150 -55 150
Thermal Characteristics
Thermal Resistance, Junction-to-Case RthJC
1.18
3.47 /W
Thermal Resistance, Junction-toAmbient
RthJA
62.5
62.5 /W
* : Drain current limited by maximum junction temperature.
Q
KHB4D0N65P
A
E
I K
M D
NN
F G
B Q
L J
O C
P H
123
1. GATE 2. DRAIN 3. SOURCE
DIM A B C D E F G H I J K L M N O P Q
MILLIMETERS 9.9 +_ 0.2
15.95 MAX
1.3+0.1/-0.05 0.8+_ 0.1 3.6 +_ 0.2 2.8+_ 0.1 3.7
0.5+0.1/-0.05 1.5
13.08+_ 0.3
1.46 1.4 +_ 0.1 1.27+_ 0.1 2.54 +_ 0.2 4.5 +_ 0.2 2.4 +_ 0.2 9.2 +_ 0.2
TO-220AB
KHB4D0N65F
AC
F O
K
E
LM D
NN 123
G B
J
R H
...