KHB4D0N65F

SEMICONDUCTOR TECHNICAL DATA KHB4D0N65P/F N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switch mode power supplies. FEATURES VDSS=650V, ID=4A Drain-Source ON Resistance : RDS(ON)=3.0 @VGS = 10V Qg(typ.)=20nC MAXIMUM RATING (Tc=25 ) CHARACTERISTIC RATING SYMBOL UNIT KHB4D0N65P KHB4D0N65F Drain-Source Voltage Gate-Source Voltage Drain Current @TC=25 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25 Derate above25 VDSS VGSS ID IDP EAS EAR dv/dt PD 650 30 4.0 4.0* 16 16* 260 10.6 4.5 106 36 0.85 0.29 V V A mJ mJ V/ns W W/ Maximum Junction Temperature Storage Temperature Range Tj Tstg 150 -55 150 Thermal Characteristics Thermal Resistance, Junction-to-Case RthJC 1.18 3.47 /W Thermal Resistance, Junction-toAmbient RthJA 62.5 62.5 /W * : Drain current limited by maximum junction temperature. Q KHB4D0N65P A E I K M D NN F G B Q L J O C P H 123 1. GATE 2. DRAIN 3. SOURCE DIM A B C D E F G H I J K L M N O P Q MILLIMETERS 9.9 +_ 0.2 15.95 MAX 1.3+0.1/-0.05 0.8+_ 0.1 3.6 +_ 0.2 2.8+_ 0.1 3.7 0.5+0.1/-0.05 1.5 13.08+_ 0.3 1.46 1.4 +_ 0.1 1.27+_ 0.1 2.54 +_ 0.2 4.5 +_ 0.2 2.4 +_ 0.2 9.2 +_ 0.2 TO-220AB KHB4D0N65F AC F O K E LM D NN 123 G B J R H ...