SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD362
DESCRIPTION ·With TO-220C package ·C...
SavantIC Semiconductor
Silicon
NPN Power
Transistors
Product Specification
2SD362
DESCRIPTION ·With TO-220C package ·Collector-base voltage: VCBO=150V ·Collector current :IC=5A ·Collector dissipation : PC=40 (TC=25 )
www.DataSheet4AUP.cPomLICATIONS ·For B/W TV horizontal deflection output applications
PINNING PIN 1 2 3
DESCRIPTION
Base Collector;connected to mounting base Emitter
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO VEBO
Collector-emitter voltage Emitter-base voltage
IC Collector current (DC)
PC Collector dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS Open emitter Open base Open collector
TC=25
VALUE 150 70 8 5 40 150
-55~150
UNIT V V V A W
SavantIC Semiconductor
Silicon
NPN Power
Transistors
Product Specification
2SD362
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CBO Collector-base breakdown voltage
IC=1mA; IE=0
V(BR)CEO www.DataSheet4U.com
V(BR)EBO
Collector-emitter breakdown voltage IC=2mA; RBE=:
Emitter-base breakdown voltage
IE=1mA; IC=0
VCEsat Collector-emitter saturation voltage IC=5A; IB=0.5A
VBEsat
Base-emitter saturation voltage
IC=5A; IB=0.5A
ICBO Collector cut-off current
VCB=100V; IE=0
IEBO Emitter cut-off current
VEB=5V; IC=0
hFE DC current gain fT Transition frequency
IC=5A ; VCE=5V IC=0.5A ; VCE=5V
MIN TYP. MAX UNIT 150 V 70 V
8V 1.0 V 1.5 V 20 µA 20 µA
20 140 10 MHz
hFE classifications NR
20-50
40-80
O 70-14...