INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD1345
DESCRIPTION ·High Switching ...
INCHANGE Semiconductor
isc Silicon
NPN Power
Transistor
isc Product Specification
2SD1345
DESCRIPTION ·High Switching Time ·Low Collector Saturation Voltage
: VCE(sat)= 0.4V(Max)@IC= 4A ·Wide Area of Safe Operation ·Complement to Type 2SB983
APPLICATIONS ·Inverters, converters ·Controllers for DC motor, pulse motor ·Switching power supplies ·General power applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
60 V
VCEO Collector-Emitter Voltage
50 V
VEBO
Emitter-Base Voltage
6V
IC Collector Current-Continuous
7A
ICM Collector Current-Peak
12 A
IB Base Current-Continuous
1.5 A
IBM Base Current-Peak
PC
Total Power Dissipation @ TC=25℃
TJ Junction Temperature
4A 40 W 150 ℃
Tstg Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal Resistance,Junction to Case
MAX 3.1
UNIT ℃/W
isc website:www.iscsemi.cn
1
INCHANGE Semiconductor
isc Silicon
NPN Power
Transistor
isc Product Specification
2SD1345
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A
VBE(sat) Base-Emitter Saturation Voltage
IC= 4A; IB= 0.4A
ICBO Collector Cutoff Current
VCB= 40V; IE= 0
ICEO Collector Cutoff Current
VCE= 40V; IB= 0
IEBO Emitter Cutoff Current
VEB= 4V; IC= 0
hFE-1
DC Current Gain
IC= 1A; VCE= 2V
hFE-2
DC Cu...