P-Channel Enhancement Mode MOS FET
S DM4435
P -C hannel E nhancement Mode MOS FE T
J ul.27 2004 ver1.1
P R ODUC T S UMMAR Y
V DS S ID R DS (ON) ( m W )...
Description
S DM4435
P -C hannel E nhancement Mode MOS FE T
J ul.27 2004 ver1.1
P R ODUC T S UMMAR Y
V DS S ID R DS (ON) ( m W ) Max
-30V
-8A
20 @ VGS = -10V 35 @ VGS = -4.5V
F E AT UR E S S uper high dense cell design for low R DS(ON).
R ugged and reliable. S urface Mount P ackage.
DDDD
8 7 65
5
S O-8
1
1 234
S SS G
ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted)
P arameter Drain-S ource Voltage Gate-S ource Voltage
Drain C urrent-C ontinuous a @ TJ=125 C -P ulsed b
Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange
S ymbol VDS VGS ID IDM IS PD
TJ, TSTG
Limit 30 25 -8 -40 -1.7 2.5
-55 to 150
Unit V V A A A W
C
THE R MAL CHAR ACTE R IS TICS
Thermal R esistance, Junction-to-Ambient a
R JA
50
C /W
1
S DM4435
E LE CTR ICAL CHAR ACTE R IS TICS (TA =25 C unless otherwise noted)
P a ra meter
S ymbol
C ondition
Min Typ C Max Unit
OFF CHARACTERISTICS 5 Drain-S ource Breakdown Voltage BVDSS VGS =0V, ID =-250uA -30
Zero Gate Voltage Drain Current IDSS VDS =-24V, VGS =0V
Gate-Body Leakage
ON CHARACTERISTICS b
IGSS VGS = 25V, VDS =0V
V -1 uA 100 nA
Gate Threshold Voltage
VGS(th) VDS =VGS, ID = -250uA -1 -1.6 -3 V
Drain-S ource On-S tate R esistance R DS(ON)
VGS = -10V, ID =-8.0A VGS = -4.5V, ID = -5.0A
15 20 m-ohm 22 35 m-ohm
On-S tate Drain Current
Forward Transconductance
DYNAMIC CHARACTERISTICS c
ID(ON) gFS
Input Capacitance
C IS S
Output Capacitance
COSS
R everse Transfer ...
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