S DM4953
S amHop Microelectronics C orp.
Augus t , 2002
Dual P -C hannel E nhancement Mode Field E ffect Transistor
...
S DM4953
S amHop Microelectronics C orp.
Augus t , 2002
Dual P -C hannel E nhancement Mode Field E ffect
Transistor
P R ODUC T S UMMAR Y
VDS S -30V
ID -4.9A
R DS (ON) ( m W ) TYP
43 @ VGS = -10V 70 @ VGS = - 4.5V
F E AT UR E S S uper high dense cell design for low R DS(ON).
R ugged and reliable. S urface Mount P ackage.
D1 D1 D2 D2
87 65
S O-8
1
1234
S1 G1 S2 G2
ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted)
P arameter Drain-S ource Voltage Gate-S ource Voltage
Drain C urrent-C ontinuous a @ TJ=125 C
-Pulsedb (300us Pulse Width)
Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange
S ymbol VDS VGS ID IDM IS PD
TJ, TSTG
Limit -30 20 4.9 30 1.7 2
-55 to 150
Unit V V A A A W
C
THE R MAL CHAR ACTE R IS TICS
Thermal R esistance, Junction-to-Ambient a
R JA
62.5
C /W
1
S DM4953
E LE CTR ICAL CHAR ACTE R IS TICS (TA=25 C unless otherwise noted)
P a ra meter
S ymbol
C ondition
Min Typ C Max Unit
OFF CHARACTERISTICS
Drain-S ource Breakdown Voltage BVDSS VGS =0V, ID =-250uA -30
V
Zero Gate Voltage Drain Current IDSS VDS =-24V, VGS =0V
-1 uA
Gate-Body Leakage
ON CHARACTERISTICS b
IGSS VGS = 20V, VDS= 0V
100 nA
Gate Threshold Voltage
VGS(th) VDS =VGS, ID = -250uA -1 -1.5 -3 V
Drain-S ource On-S tate R esistance R DS(ON)
VGS =-10V, ID= -4.9A VGS =-4.5V, ID =-3.6A
43 53 m-ohm 70 95 m-ohm
On-S tate Drain Current
Forward Transconductance
DYNAMIC CHARACTERISTICS c
ID(ON) gFS...
