SDM8401

S DM8401 S amHop Microelectronics C orp. Augus t , 2002 Dual E nhancement Mode Field E ffect Transistor ( N and P Channel) P R ODUC T S UMMAR Y (N-C hannel) VDS S ID R DS (ON) ( m W ) TYP 30V 6A 18.5 @ VGS = 10V 25 @ VGS = 4.5V P R ODUC T S UMMAR Y (P -C hannel) VDS S ID R DS (ON) ( m W ) TYP -30V -4.5A 38.5 @ VGS = -10V 57.5 @ VGS = -4.5V D1 D1 D2 D2 87 65 S O-8 1 1234 S1 G1 S2 G2 ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted) P arameter S ymbol N-C hannel P-C hannel Unit Drain-S ource Voltage VDS 30 -30 V Gate-S ource Voltage VGS 20 20 V Drain C urrent-C ontinuous a @ TJ=125 C -P ulsed b ID 6.0 4.5 IDM 18.0 15 A A Drain-S ource Diode Forward C urrent a IS 1.7 -1.7 A Maximum P ower Dissipation a PD 2.0 W Operating Junction and S torage Temperature R ange TJ, TSTG -55 to 150 C THE R MAL CHAR ACTE R IS TICS Thermal R esistance, Junction-to-Ambient a R JA 62.5 C/W 1 S DM8401 N-Channel ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) P a ra meter S ymbol Condition Min Typ C Max Unit 5 OFF CHARACTERISTICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS b Gate Threshold Voltage BVDSS VGS =0V, ID =250uA IDSS VDS =24V, VGS =0V IGSS VGS = 16V, VDS= 0V 30 V 1 uA 100 nA VGS(th) VDS =VGS, ID = 250uA 1 1.5 3 V Drain-S ource On-S tate R esistance R DS(ON) VGS =10V, ID =9A VGS =4.5V, ID= 7A 18.5 21 m ohm 25 32 m ohm On-S tate Drain Current Forward Transcon...