TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK882
2SK882
FM Tuner, VHF RF Amplifier Applications
Unit...
TOSHIBA Field Effect
Transistor Silicon N Channel MOS Type
2SK882
2SK882
FM Tuner, VHF RF Amplifier Applications
Unit: mm
Low reverse transfer capacitance: Crss = 0.025 pF (typ.) Low noise figure: NF = 1.7dB (typ.) High power gain: Gps = 28dB (typ.) Recommend operation voltage: 5~15 V
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDS 20 V
Gate-source voltage
VGS
±5 V
Drain current
ID 30 mA
Drain power dissipation
PD 100 mW
Channel temperature
Tch 125 °C
Storage temperature
Tstg
−55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
JEDEC
―
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
JEITA TOSHIBA
SC-70 2-2E1C
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Weight: 0.006 g (typ.)
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Gate leakage current Drain-source voltage
Drain current
Gate-source cut-off voltage Forward transfer admittance Input capacitance Reverse transfer capacitance Power gain Noise f...