TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK368
Audio Frequency and High Voltage Amplifier Applic...
TOSHIBA Field Effect
Transistor Silicon N Channel Junction Type
2SK368
Audio Frequency and High Voltage Amplifier Applications Constant Current Applications
2SK368
Unit: mm
· High breakdown voltage: VGDS = −100 V (min) · High input impedance: IGSS = −1.0 nA (max) (VGS = −80 V) · Small package
Maximum Ratings (Ta = 25°C)
Characteristics
Gate-drain voltage Gate current Drain power dissipation Junction temperature Storage temperature range
Symbol
VGDS IG PD Tj Tstg
Rating
-100 10 150 125
-55~125
Unit
V mA mW °C °C
Electrical Characteristics (Ta = 25°C)
JEDEC
TO-236MOD
JEITA
SC-59
TOSHIBA
2-3F1B
Weight: 0.012 g (typ.)
Characteristics
Symbol
Test Condition
Gate cut-off current Gate-drain breakdown voltage
Drain current
Gate-source cut-off voltage Forward transfer admittance Input capacitance Reverse transfer capacitance
Noise figure
IGSS
VGS = -80 V, VDS = 0
V (BR) GDS VDS = 0, IG = -100 mA
IDSS VDS = 10 V, VGS = 0
(Note)
VGS (OFF) ïYfsï Ciss Crss
NF
VDS = 10 V, ID = 0.1 mA VDS = 10 V, VGS = 0, f = 1 kHz VDS = 10 V, VGS = 0, f = 1 MHz VDG = 10 V, ID = 0, f = 1 MHz VDS = 10 V, VGS = 0 RG = 100 kW, f = 100 Hz
Note: IDSS classification O: 0.6~1.4 mA, Y: 1.2~3.0 mA, GR (G): 2.6~6.5 mA
Marking
Min Typ. Max Unit
¾ ¾ -1.0 nA
-100 ¾
¾
V
0.6 ¾ 6.5 mA
-0.4
¾ -3.5
V
1.5 4.6 ¾ mS
¾ 13 ¾ pF
¾ 3 ¾ pF
¾ 0.5 ¾ dB
1 2003-03-26
2SK368
2 2003-03-26
2SK368
3 2003-03-26
2SK368
RESTRICTIONS ON PRODUCT USE
000707EAA
· TOSHIBA is continually working to impro...