RF1S70N03

SEMICONDUCTOR RFP70N03, RF1S70N03, RF1S70N03SM December 1995 70A, 30V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs Features 70A, 30V rDS(ON) = 0.010Ω Temperature Compensating PSPICE Model Peak Current vs Pulse Width Curve UIS Rating Curve (Single Pulse) +175oC Operating Temperature Description The RFP70N03, RF1S70N03, and RF1S70N03SM N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, relay drivers and emitter switches for bipolar transistors. These transistors can be operated directly from integrated circuits. PACKAGE AVAILABILITY PART NUMBER PACKAGE BRAND RFP70N03 TO-220AB RFP70N03 RF1S70N03 TO-262AA F1S70N03 RF1S70N03SM TO-263AB F1S70N03 NOTE: When ordering use the entire part number. Add the suffix, 9A, to obtain the TO-263AB variant in tape and reel, e.g. RF1S70N03SM9A. Packages JEDEC TO-220AB SOURCE DRAIN GATE DRAIN (FLANGE) JEDEC TO-262AA SOURCE DRAIN GATE DRAIN (FLANGE) A JEDEC TO-263AB GATE SOURCE MA A DRAIN (FLANGE) Symbol D G Formerly developmental type TA49025. S Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified Drain-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...