FX203

Ordering number:EN5264 FX203 P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications Features · Low ON-resistance. · Ultrahigh-speed switching. · Low-voltage drive. Package Dimensions unit:mm 2121 [FX203] Switching Time Test CIrcuit 1:No Contact 2:Gate 3:Source 4:No Contact 5:Drain 6:Drain SANYO:XP5 (Bottom view) Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions Ratings –30 ±20 –4 –16 8 2 150 –55 to +150 Unit V V A A W W Tc=25˚C Mounted on ceramic board (750mm2×0.8mm) ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter D-S Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source ON-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage Symbol V(BR)DSS IDSS IGSS VGS(off) | Yfs | RDS(on) RDS(on) Ciss Coss Crss td(on) tr td(off) tf VSD ID=–1mA, VGS=0 VDS=–30V, VGS=0 VGS=±16V, VDS=0 VDS=–10V, I D=–1mA VDS=–10V, I D=–2A ID=–2A, VGS=–10V ID=–2A, VGS=–4V VDS=–10V, f=1MHz VDS=–10V, f=1MHz VDS=–10V, f=1MHz See specified Test Circuit See specified Test Circuit See specified Test Circuit See specified Test Circuit IS=–4A, VGS=0 –1.0 ...