STD6N60M2

STB6N60M2, STD6N60M2 N-channel 600 V, 1.06 Ω typ., 4.5 A MDmesh™ M2 Power MOSFETs in D2PAK and DPAK packages Datasheet - production data TAB 3 1 D2 PAK TAB 3 1 DPAK Features Order code STB6N60M2 STD6N60M2 VDS @ TJmax 650 V RDS(on) max 1.2 Ω ID 4.5 A Extremely low gate charge Excellent output capacitance (Coss) profile 100% avalanche tested Zener-protected Figure 1. Internal schematic diagram , TAB Applications Switching applications Description These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters. Order code STB6N60M2 STD6N60M2 AM15572v1 Table 1. Device summary Marking Package 6N60M2 D2PAK DPAK Packing Tape and reel May 2016 This is information on a product in full production. DocID024772 Rev 3 1/21...