STF6N60M2

STF6N60M2, STP6N60M2, STU6N60M2 N-channel 600 V, 1.06 Ω typ., 4.5 A MDmesh II Plus™ low Qg Power MOSFET in TO-220FP, TO-220 and IPAK packages Datasheet - production data TAB 3 2 1 TO-220FP TAB IPAK 3 2 1 3 2 1 TO-220 Figure 1. Internal schematic diagram , TAB Features Order codes STF6N60M2 STP6N60M2 STU6N60M2 VDS @ TJmax RDS(on) max ID 650 V 1.2 Ω 4.5 A Extremely low gate charge Lower RDS(on) x area vs previous generation Low gate input resistance 100% avalanche tested Zener-protected Applications Switching applications AM15572v1 Description These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. They are therefore suitable for the most demanding high efficiency converters. Order codes STF6N60M2 STP6N60M2 STU6N60M2 Table 1. Device summary Marking Package 6N60M2 TO-220FP TO-220 IPAK June 2013 This is information on a product in full production. DocID024771 Rev 1 Packaging Tube 1/18 www.st.com Contents Contents STF6N60M2, STP6N60M2, STU6N60M2 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . ...