RFUH20NS3SFH

Super Fast Recovery Diode RFUH20NS3SFH zSerise Super Fast Recovery zDimensions(Unit : mm) zApplications General rectification RFUH20 NS3S ձ zFeatures 1)Ultra low switching loss 2)High current overload capacity zConstruction Silicon epitaxial planer type ROHM : LPDS JEITA : TO263S ձ Manufacture Date zTaping Dimensions(Unit : mm) Data Sheet AEC-Q101 Qualified zLand Size Figure(Unit : mm) LPDS zStructure zAbsolute Maximum Ratings(Tc=25°C) Parameter Symbol Repetitive peak reverse voltage Reverse voltage Average rectified foward current VRM VR Io Forward current surge peak Junction temperature IFSM Tj Storage temperature Tstg Conditions Duty0.5 Direct voltage 60Hz half sin wave , Resistive load Tc=32°C 60Hz half sin wave , Non-repetitive at Tj=25°C (*1) zElectrical Characteristics(Tj=25°C) Parameter Forward voltage Reverse current Reverse recovery time Thermal resistance Symbol VF IR trr Rth(j-c) Conditions IF=20A VR=350V IF=0.5A,IR=1A,Irr=0.25×IR Junction to case Min. Limits Unit 350 V 350 V 20 A 100 A 150 °C 55 to 150 °C (*1) 1-3pin common circuit Typ. 1.3 0.05 16 Max. 1.5 10 25 3.0 Unit V μA ns °C/W WWWROHMCOM Ú2/(-#O,TD!LLRIGHTSRESERVED 1/4 2012.06 - Rev.A RFUH20NS3SFH 　 Data Sheet FORWARD CURRENT:IF(A) FORWARD VOLTAGE:VF(mV) 100 10 Tj=150°C Tj=125°C Tj=75°C 1 Tj=25°C 0.1 0 1350 1340 1330 1320 1310 1300 1290 1280 1270 1260 1250 500 1000 1500 2000 FORWARD VOLTAGE:VF(mV) VF-IF CHARACTERISTICS 2500 IF=...