Document
2SD1136
Silicon NPN Triple Diffused
Application
Power switching TV horizontal deflection output
Outline
TO-220AB
1 23
1. Base 2. Collector
(Flange) 3. Emitter
2SD1136
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector surge current Collector power dissipation
Junction temperature Storage temperature Note: 1. Value at TC = 25°C.
Symbol VCBO VCEO VEBO IC IC(peak) IC(surge) PC PC*1 Tj Tstg
Ratings 200 80 5 4 5 15 1.8 30 150 –45 to +150
Unit V V V A A A W W °C °C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Collector to base breakdown V(BR)CBO voltage
200
Collector to emitter breakdown V(BR)CEO voltage
80
Emitter to base breakdown voltage
V(BR)EBO
5
Collector cutoff current
DC current transfer ratio
Collector to emitter saturation voltage
ICES hFE VCE(sat)
— 20 —
Base to emitter saturation voltage
VBE(sat)
—
Fall time Note: 1. Pulse test.
tf —
Typ —
—
—
— — —
—
—
Max —
—
—
1.0 — 1.5
1.5
1.0
Unit V
Test conditions IC = 1 mA, IE = 0
V IC = 10 mA, RBE = ∞
V IE = 1 mA, IC = 0
mA VCE = 150 V, RBE = 0 VCE = 5 V, IC = 4 A*1
V IC = 4 A, IB = 0.4 A*1
V IC = 4 A, IB = 0.4 A*1
µs IC = 3.5 A, IB1 = 0.45 A, LB = 0
2
DC current transfer ratio hFE
Collector current IC (A)
Collector power dissipation Pc (W)
Collector current IC (A)
Maximum Collector Dissipation Curve 40
30
20
10
0 50 100 150 200 Case temperature TC (°C) Area of Safe Operation
10 f = 15.75 kHz TC = 25°C
(80 V, 15 A)
For picture 10 tube arcing
0.1 mA 0 100 200
Collector to emitter voltage VCE (V)
Typical Output Characteristics
5 TC = 25°C
4
0.14 A 0.12 A 0.1
P
C
A
=
30
W
0.08 A
3 0.06 A
0.04 A 2
0.02 A
1
IB = 0
0 2 4 6 8 10 Collector to emitter voltage VCE (V)
1,000 500
DC Current Transfer Ratio vs. Collector Current
VCE = 5 V
200 TC = 75°C 25
100 –25
50
20
10 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2
Collector current IC (A)
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Base to emitter saturation voltage VBE (sat) (V)
Collector to emitter saturation voltage VCE (sat) (V)
Collector to emitter saturation voltage VCE (sat) (V)
Collector to Emitter Saturation Voltage vs. Base Current
10
TC = 25°C 5
2
2A 1.0
IC = 1 A 0.5
4A
0.2
0.1 10
20 50 100 200 500 1,000 Base current IB (mA)
Collector to Emitter Saturation Voltage vs. Collector Current
1.5
IC = 10 IB
1.0
0.5 TC = 75°C 25
0 0.05 0.01 0.03 0.1 0.3 1.0
Collector current IC (A)
–25 5
Base to Emitter Saturation Voltage vs. Collector Current
1.5
IC = 10 IB
1.0 TC = –25°C
25 0.5 75
0 0.005 0.01 0.03 0.1 0.3 1.0
Collector current IC (A)
35
4
2SD1136
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1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part
of this document without Hitachi’s permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any
other reasons during operation of the user’s unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and
performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi’s products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropriate officer of Hitachi’s sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi’s products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS.
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