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2SD1136 Dataheets PDF



Part Number 2SD1136
Manufacturers Hitachi
Logo Hitachi
Description Silicon NPN Transistor
Datasheet 2SD1136 Datasheet2SD1136 Datasheet (PDF)

2SD1136 Silicon NPN Triple Diffused Application Power switching TV horizontal deflection output Outline TO-220AB 1 23 1. Base 2. Collector (Flange) 3. Emitter 2SD1136 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector surge current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC IC(peak) IC(surge.

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2SD1136 Silicon NPN Triple Diffused Application Power switching TV horizontal deflection output Outline TO-220AB 1 23 1. Base 2. Collector (Flange) 3. Emitter 2SD1136 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector surge current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC IC(peak) IC(surge) PC PC*1 Tj Tstg Ratings 200 80 5 4 5 15 1.8 30 150 –45 to +150 Unit V V V A A A W W °C °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Collector to base breakdown V(BR)CBO voltage 200 Collector to emitter breakdown V(BR)CEO voltage 80 Emitter to base breakdown voltage V(BR)EBO 5 Collector cutoff current DC current transfer ratio Collector to emitter saturation voltage ICES hFE VCE(sat) — 20 — Base to emitter saturation voltage VBE(sat) — Fall time Note: 1. Pulse test. tf — Typ — — — — — — — — Max — — — 1.0 — 1.5 1.5 1.0 Unit V Test conditions IC = 1 mA, IE = 0 V IC = 10 mA, RBE = ∞ V IE = 1 mA, IC = 0 mA VCE = 150 V, RBE = 0 VCE = 5 V, IC = 4 A*1 V IC = 4 A, IB = 0.4 A*1 V IC = 4 A, IB = 0.4 A*1 µs IC = 3.5 A, IB1 = 0.45 A, LB = 0 2 DC current transfer ratio hFE Collector current IC (A) Collector power dissipation Pc (W) Collector current IC (A) Maximum Collector Dissipation Curve 40 30 20 10 0 50 100 150 200 Case temperature TC (°C) Area of Safe Operation 10 f = 15.75 kHz TC = 25°C (80 V, 15 A) For picture 10 tube arcing 0.1 mA 0 100 200 Collector to emitter voltage VCE (V) Typical Output Characteristics 5 TC = 25°C 4 0.14 A 0.12 A 0.1 P C A = 30 W 0.08 A 3 0.06 A 0.04 A 2 0.02 A 1 IB = 0 0 2 4 6 8 10 Collector to emitter voltage VCE (V) 1,000 500 DC Current Transfer Ratio vs. Collector Current VCE = 5 V 200 TC = 75°C 25 100 –25 50 20 10 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2 Collector current IC (A) 5 2SD1136 3 2SD1136 Base to emitter saturation voltage VBE (sat) (V) Collector to emitter saturation voltage VCE (sat) (V) Collector to emitter saturation voltage VCE (sat) (V) Collector to Emitter Saturation Voltage vs. Base Current 10 TC = 25°C 5 2 2A 1.0 IC = 1 A 0.5 4A 0.2 0.1 10 20 50 100 200 500 1,000 Base current IB (mA) Collector to Emitter Saturation Voltage vs. Collector Current 1.5 IC = 10 IB 1.0 0.5 TC = 75°C 25 0 0.05 0.01 0.03 0.1 0.3 1.0 Collector current IC (A) –25 5 Base to Emitter Saturation Voltage vs. Collector Current 1.5 IC = 10 IB 1.0 TC = –25°C 25 0.5 75 0 0.005 0.01 0.03 0.1 0.3 1.0 Collector current IC (A) 35 4 2SD1136 When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi’s permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user’s unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi’s products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropriate officer of Hitachi’s sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi’s products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS. Hitachi, Ltd. Semiconductor & IC Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 For further information write to: Hitachi America, Ltd. Hitachi Europe GmbH Semiconductor & IC Div. Electronic Components Group 2000 Sierra Point Parkway Continental Europe Brisbane, CA. 94005-1835 Dornacher Straße 3 USA D-85622 Feldkirchen Tel: 415-589-8300 München Fax: 415-583-4207 Tel: 089-9 91 80-0 Fax: 089-9 29 30 00 Hitachi Europe Ltd. Electronic Components Div. Northern Europe Headquarters Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA United Kingdom Tel: 0628-585000 Fax: 0628-778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 0104 Tel: 535-2100 Fax: 535-1533 Hitachi Asia (Hong Kong) Ltd. Unit 706, North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel: 27359218 Fax: 27306071 5 .


RNFMS1H-40 2SD1136 UPD4564441


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