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D2504 Dataheets PDF



Part Number D2504
Manufacturers Panasonic Semiconductor
Logo Panasonic Semiconductor
Description 2SD2504
Datasheet D2504 DatasheetD2504 Datasheet (PDF)

Transistors 2SD2504 Silicon NPN epitaxial planar type For low-frequency power amplification ■ Features • Low collector-emitter saturation voltage VCE(sat) • Large collector current IC ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current * Collector power dissipation Junction temperature Storage temperature VCBO VCEO VEBO IC ICP PC.

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Transistors 2SD2504 Silicon NPN epitaxial planar type For low-frequency power amplification ■ Features • Low collector-emitter saturation voltage VCE(sat) • Large collector current IC ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current * Collector power dissipation Junction temperature Storage temperature VCBO VCEO VEBO IC ICP PC Tj Tstg 15 10 10 5 9 750 150 −55 to +150 Note) *: t = 380 µs Unit V V V A A mW °C °C www.DataSheet4U.com 5.0±0.2 Unit: mm 4.0±0.2 5.1±0.2 0.7±0.2 12.9±0.5 0.7±0.1 0.45+–00..115 2.5+–00..26 2.5+–00..26 0.45+–00..115 1 23 2.3±0.2 1 : Emitter 2 : Collector 3 : Base TO-92-B1 Package ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio * Collector-emitter saturation voltage * Transition frequency Collector output capacitance (Common base, input open circuited) Symbol VCBO VCEO ICBO ICEO IEBO hFE1 hFE2 VCE(sat) fT Cob Conditions IC = 1 mA, IE = 0 IC = 10 µA, IB = 0 VCB = 10 V, IE = 0 VCE = 5 V, IB = 0 VEB = 5 V, IE = 0 VCE = 2 V, IC = 0.5 A VCE = 2 V, IC = 2 A IC = 3 A, IB = 0.1 A VCB = 6 V, IE = −50 mA, f = 200 MHz VCB = 20 V, IE = 0, f = 1 MHz Min 10 10 300 195 Typ Max 0.1 1.0 0.1 800 0.28 0.50 170 45 65 Unit V V µA µA µA  V MHz pF Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Pulse measurement Publication date: February 2003 SJC00267DED 1 Collector power dissipation PC (mW) 2SD2504 PC  Ta 800 600 400 200 0 0 40 80 120 160 Ambient temperature Ta (°C) Collector current IC (A) IC  VCE 4.0 Ta = 25°C IB = 10 mA 3.5 9 mA 8 mA 3.0 7 mA 2.5 6 mA 5 mA 2.0 4 mA 1.5 3 mA 1.0 2 mA 0.5 1 mA 0 0 2 4 6 8 10 12 Collector-emitter voltage VCE (V) Collector current IC (A) IC  IB 0.5 VCE = 2 V Ta = 25°C 0.4 0.3 0.2 0.1 0 0 0.2 0.4 0.6 0.8 1.0 1.2 Base current IB (mA) Collector-emitter saturation voltage VCE(sat) (V) VCE(sat)  IC 10 IC / IB = 30 1 Ta = 85°C 25°C −25°C 0.1 0.01 0.001 0.1 1 Collector current IC (A) 10 (pF) 1 000 Cob  VCB f = 1 MHz Ta = 25°C Forward current transfer ratio hFE Collector current IC (A) www.DaICtaShVeeBEt4U.com 1.2 VCE = 2 V 1.0 0.8 Ta = 85°C 0.6 25°C 0.4 −25°C 0.2 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Base-emitter voltage VBE (V) hFE  IC 800 VCE = 2 V 700 Ta = 85°C 600 25°C 500 −25°C 400 300 200 100 0 0.001 0.01 0.1 1 10 Collector current IC (A) 100 Cob 100 Collector output capacitance (Common base, input open circuited) 10 1 5 10 15 20 25 30 Collector-base voltage VCB (V) 2 SJC00267DED www.DataSheet4U.com Request for your special attention and precautions in using .


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