Document
Transistors
2SD2504
Silicon NPN epitaxial planar type
For low-frequency power amplification
■ Features • Low collector-emitter saturation voltage VCE(sat) • Large collector current IC
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current * Collector power dissipation Junction temperature Storage temperature
VCBO VCEO VEBO
IC ICP PC Tj Tstg
15 10 10 5 9 750 150 −55 to +150
Note) *: t = 380 µs
Unit V V V A A mW °C °C
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5.0±0.2
Unit: mm
4.0±0.2
5.1±0.2
0.7±0.2 12.9±0.5
0.7±0.1
0.45+–00..115 2.5+–00..26
2.5+–00..26
0.45+–00..115
1 23
2.3±0.2
1 : Emitter 2 : Collector 3 : Base TO-92-B1 Package
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio *
Collector-emitter saturation voltage * Transition frequency Collector output capacitance (Common base, input open circuited)
Symbol
VCBO VCEO ICBO ICEO IEBO hFE1 hFE2 VCE(sat)
fT Cob
Conditions
IC = 1 mA, IE = 0 IC = 10 µA, IB = 0 VCB = 10 V, IE = 0 VCE = 5 V, IB = 0 VEB = 5 V, IE = 0 VCE = 2 V, IC = 0.5 A VCE = 2 V, IC = 2 A IC = 3 A, IB = 0.1 A VCB = 6 V, IE = −50 mA, f = 200 MHz VCB = 20 V, IE = 0, f = 1 MHz
Min 10 10
300 195
Typ Max
0.1 1.0 0.1 800
0.28 0.50 170 45 65
Unit V V µA µA µA
V MHz pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Pulse measurement
Publication date: February 2003
SJC00267DED
1
Collector power dissipation PC (mW)
2SD2504
PC Ta
800
600
400
200
0 0 40 80 120 160 Ambient temperature Ta (°C)
Collector current IC (A)
IC VCE
4.0 Ta = 25°C
IB = 10 mA
3.5 9 mA
8 mA 3.0
7 mA
2.5 6 mA
5 mA 2.0
4 mA
1.5 3 mA
1.0 2 mA
0.5 1 mA
0 0 2 4 6 8 10 12
Collector-emitter voltage VCE (V)
Collector current IC (A)
IC IB
0.5 VCE = 2 V Ta = 25°C
0.4
0.3
0.2
0.1
0 0 0.2 0.4 0.6 0.8 1.0 1.2 Base current IB (mA)
Collector-emitter saturation voltage VCE(sat) (V)
VCE(sat) IC
10 IC / IB = 30
1 Ta = 85°C
25°C −25°C
0.1
0.01
0.001 0.1
1 Collector current IC (A)
10
(pF)
1 000
Cob VCB
f = 1 MHz Ta = 25°C
Forward current transfer ratio hFE
Collector current IC (A)
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1.2 VCE = 2 V
1.0
0.8
Ta = 85°C 0.6
25°C 0.4
−25°C
0.2
0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Base-emitter voltage VBE (V)
hFE IC
800 VCE = 2 V
700 Ta = 85°C
600 25°C
500 −25°C
400
300
200
100
0 0.001
0.01 0.1 1 10 Collector current IC (A)
100
Cob
100
Collector output capacitance (Common base, input open circuited)
10 1 5 10 15 20 25 30 Collector-base voltage VCB (V)
2
SJC00267DED
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