Document
MT3205AF
N-Channel PowerMOSFET 60V, 75A, 5.5m :
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This N-channel MOSFET is produced using MOS-TECH Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
Features
R DS(on) = 5.5m : ( Typ.)@ VGS= 10V, ID= 30A +LJKSHUIRUPDQFHWUHQFKWHFKQRORJ\IRUH[WUHPHO\ORZ
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Power Management in Inverter system Synchronous Rectification
Absolute Maximum Ratings(TA = 25 unless otherwise noted)
G DS
TO-220FB-3L
Symbol VDSS VGSS ID IDM EAS
PD
TJ, TSTG
Parameter
Ratings
Units
Drain to Source Voltage
V
Gate to Source Voltage Drain Current Drain Current
-Continuous (TC = 25oC) - Pulsed
±25 V
(Note 1)
75 A
150 A
Single Pulsed Avalanche Energy
Power Dissipation
(TC = 25oC) - Derate above 25oC
Operating and Storage Temperature Range
(Note 2)
320 mJ
180 W 1.0 W/oC
-55 to +175
oC
Thermal Characteristics
Symbol
RTJC RTJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Ratings
Units
0.7 oC/W
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MT3205AF
Package Marking and Ordering Information TC = 25oC unless otherwise noted
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
MT3205AF MT3205AFTO-220 50units
Electrical Characteristics
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 250PA, VGS = 0V, TJ = 2 9
VDS = 48V, VGS = 0V VDS = 48V, TC = 85 oC
-- 1 PA
- - 30
VGS = ±25V, VDS = 0V
- - ±100 nA
On Characteristics
VGS(th) RDS(on)
Gate Threshold Voltage9*6 9'6,' ȝ$39
Static Drain to Source On Resistance
VGS = 10V, ID = 30 A
-5.5 6.5
m:
Dynamic Characteristics
Ciss Coss Crss RG Qg(tot) Qg(th) Qgs Qgs2 Qgd
Input Capacitance Output Capacitance Reverse Transfer Capacitance
VDS = 30V, VGS = 0V f = 1MHz
- 3800 4560 pF - 430 - pF - 190 - pF
Gate Resistance
VGS = 0V, f = 1MHz
- 1 -:
Total Gate Charge at 10V
VGS = 10V
- 68 88 nC
Threshold Gate Charge
VGS = 4.5V
VDS = 48V
-
33
nC
Gate to Source Gate Charge
ID = 30A
-
15 -nC
Gate Charge Threshold to PlateauIg=1mA-- nC
Gate to Drain “Miller” Charge
- 19 -nC
Switching Characteristics
tON td(on) tr td(off) tf tOFF
Turn-On Time Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Turn-Off Time
VDS = 30V, ID = 30A VGS = 10V, RGEN = 3.0:
- ns - 18 - ns - 35 - ns - 4 ns - 1 4 ns - 6 ns
Drain-Source Diode Characteristics
VSD Drain to Source Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge
VGS = 0V, ISD = 30A
VGS = 0V, ISD = 30A dIF/dt = 100A/Ps
- - 1.3 V - 4 - ns - 7 - nC
Notes: 1: Calculated continuous current based on maximum allowable junction temperature. Package limited to 75A continuous, see Figure 9.
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ID (A)
Typical Performance Characteristics
MT3205AF
RDS(ON) (m:)
150 10V
125
6V
100 5V
75 4.5V
50
25
0 0
VGS=4V
1234 VDS (Volts)
Figure 1: On-Region Characteristics
5
6.2
6.0
5.8 VGS=10V
5.6
5.4
5.2
5.0 0 20 40 60 80 100 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage
25 ID=30A
20
15 125°C
10 25°C
5
-40°C 0
4 8 12 16 20 VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
IS (A)
Normalized On-Resistance
ID(A)
100 VDS=5V
80
60
40
20
0 2
125°C
25°C
-40°C
2.5 3 3.5 4 4.5 5
VGS(Volts) Figure 2: Transfer Characteristics
5.5
2.2
2
1.8
1.6 VGS=10V, 30A 1.4
1.2
1
0.8
0.6 -50 -25 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature
100
10
1 125°C
0.1 0.01 25°C
0.001
-40°C
0.0001 0.0
0.2 0.4 0.6 0.8 1.0
VSD (Volts) Figure 6: Body-Diode Characteristics
1.2
RDS(ON) (m:)
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VGS (Volts)
Typical Performance Characteristics (Continued).