Power MOSFET
High Voltage MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTA2N100 IXTP2N100
VDSS = ID25 = ≤RDS(on)
1000V 2A 7Ω...
Description
High Voltage MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTA2N100 IXTP2N100
VDSS = ID25 = ≤RDS(on)
1000V 2A 7Ω
TO-263 (IXTA)
Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS
dV/dt
PD TJ TJM Tstg TL TSOLD Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C
1.6mm (0.062) from Case for 10s Plastic Body for 10s Mounting Torque (TO-220) TO-263 TO-220
Maximum Ratings 1000 1000
V V
±20 V ±30 V
2A 8A
2A 150 mJ
5 V/ns
100 W
- 55 ... +150 150
- 55 ... +150
300 260
1.13 / 10
2.5 3.0
°C °C °C °C °C Nm/lb.in.
g g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 250μA
VGS(th)
VDS = VGS, ID = 250μA
IGSS VGS = ±20V, VDS = 0V
IDSS VDS = VDSS, VGS = 0V TJ = 125°C
RDS(on)
VGS = 10V, ID = 0.5 ID25, Note 1
Characteristic Values Min. Typ. Max.
1000
V
2.0 4.5 V
±100 nA
25 μA 100 μΑ
7Ω
GS TO-220 (IXTP)
(TAB)
G DS
(TAB)
G = Gate S = Source
D = Drain TAB = Drain
Features
z International Standard Packages z Avalanche Rated z Low Package Inductance (< 5nH) z Fast Switching Times
Advantages
z Easy to Mount z Space Savings z High Power Density
Applications
z Switched-Mode and Resonant-Mode Power Supplies
z FlyBack Inverters z DC Choppers
© 2009 IXYS CORPORATION, All Rights Reserved
DS97540B(04/09)
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
gfs VDS = 10V...
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