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IXTP2N100

IXYS Corporation

Power MOSFET

High Voltage MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA2N100 IXTP2N100 VDSS = ID25 = ≤RDS(on) 1000V 2A 7Ω...


IXYS Corporation

IXTP2N100

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Description
High Voltage MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA2N100 IXTP2N100 VDSS = ID25 = ≤RDS(on) 1000V 2A 7Ω TO-263 (IXTA) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C 1.6mm (0.062) from Case for 10s Plastic Body for 10s Mounting Torque (TO-220) TO-263 TO-220 Maximum Ratings 1000 1000 V V ±20 V ±30 V 2A 8A 2A 150 mJ 5 V/ns 100 W - 55 ... +150 150 - 55 ... +150 300 260 1.13 / 10 2.5 3.0 °C °C °C °C °C Nm/lb.in. g g Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 250μA VGS(th) VDS = VGS, ID = 250μA IGSS VGS = ±20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125°C RDS(on) VGS = 10V, ID = 0.5 ID25, Note 1 Characteristic Values Min. Typ. Max. 1000 V 2.0 4.5 V ±100 nA 25 μA 100 μΑ 7Ω GS TO-220 (IXTP) (TAB) G DS (TAB) G = Gate S = Source D = Drain TAB = Drain Features z International Standard Packages z Avalanche Rated z Low Package Inductance (< 5nH) z Fast Switching Times Advantages z Easy to Mount z Space Savings z High Power Density Applications z Switched-Mode and Resonant-Mode Power Supplies z FlyBack Inverters z DC Choppers © 2009 IXYS CORPORATION, All Rights Reserved DS97540B(04/09) Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs VDS = 10V...




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