SD4410

N-CHANNEL ENHANCEMENT MODE POWER MOSFET SD4410 Description The SD4410 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Features *Dynamic dv/dt Rating BVDSS 30 V *Simple Drive Requirement RDS(ON) 13.5 mΩ * Fast Switching & Repetitive Avalanche Rated ID 10 A Package Dimensions Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@10V Continuous Drain Current, VGS@10V Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor Symbol VDS VGS ID @TA=25℃ ID @TA=70℃ IDM PD @TA=25℃ operating Junction and Storage Temperature Range Tj, Tstg Thermal Data Parameter Thermal Resistance Junction-ambient Max. Symbol Rthj-amb Ratings 30 +/- 20 10 8 50 2.5 0.02 -55~+150 Value 50 Unit V V A A A W W/℃ ℃ Unit ℃/W SD4410 Page: 1/5 N-CHANNEL ENHANCEMENT MODE POWER MOSFET Electrical Characteristics (Tj = 25℃ unless otherwise specified) SD4410 Source-Drain Diode Notes: 1. Pulse width limited by safe operating area. 2. Pulse width≦300us, duty cycle≦2%. SD4410 Page: 2/5 N-CHANNEL ENHANCEMENT MODE POWER MOSFET SD4410 Characteristics Curve Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. No...