VS-1EFH02HM3

www.vishay.com VS-1EFH02HM3 Vishay Semiconductors Hyperfast Rectifier, 1 A FRED Pt® DO-219AB (SMF) Cathode Anode FEATURES Hyperfast recovery time, reduced Qrr, and soft recovery 175 °C maximum operating junction temperature Specified for output and snubber operation Low forward voltage drop Low leakage current Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C AEC-Q101 qualified, meets JESD 201 class 2 whisker test Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRODUCT SUMMARY Package IF(AV) VR VF at IF (typ. 125 °C) trr TJ max. Diode variation DO-219AB (SMF) 1A 200 V 0.74 V 25 ns 175 °C Single die DESCRIPTION / APPLICATIONS State of the art hyperfast recovery rectifiers designed with optimized performance of forward voltage drop and hyperfast recovery. The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness, and reliability characteristics. These devices are intended for use in snubber boost, lighting, piezo-injection, as high frequency rectifiers, and freewheeling diodes. Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce power dissipation in the switching element. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Peak repetitive reverse voltage VRRM Average rectified forward current IF(AV) Non-repetitive peak surge current IFSM Operating junction and storage temperature range TJ, TSt...