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VS-2EFH01HM3
Vishay Semiconductors
Hyperfast Rectifier, 2 A FRED Pt®
DO-219AB (SMF)
Cathode
Anode
FEATURES • Hyperfast recovery time, reduced Qrr, and soft
recovery
• 175 °C maximum operating junction temperature
• Specified for output and snubber operation
• Low forward voltage drop
• Low leakage current
• Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
• AEC-Q101 qualified, meets JESD 201 class 2 whisker test
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
PRODUCT SUMMARY
Package IF(AV) VR
VF at IF (typ. 125 °C) trr
TJ max. Diode variation
DO-219AB (SMF) 2A
100 V 0.75 V 25 ns 175 °C Single die
DESCRIPTION / APPLICATIONS
State of the art hyperfast recovery rectifiers specifically designed with optimized performance of forward voltage drop and hyperfast recovery time.
The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness, and reliability characteristics.
These devices are intended for use in snubber, boost, lighting, piezo-injection, as high frequency rectifiers, and freewheeling diodes.
Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce power dissipation in the switching element.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Peak repetitive reverse voltage
VRRM
Average rectified forward current
IF(AV)
Non-repetitive peak surge current
IFSM
Operating junction and storage temperature range TJ, TStg
Note (1) Device on PCB with 8 mm x 16 mm soldering lands
TEST CONDITIONS
TC = 150 °C (1) TJ = 25 °C
VALUES 100 2 50
-65 to +175
UNITS V A °C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
Breakdown voltage, blocking voltage
VBR, VR IR = 100 μA
100
Forward voltage
IF = 2 A VF
IF = 2 A, TJ = 125 °C
-
Reverse leakage current
VR = VR rated IR
TJ = 125 °C, VR = VR rated
-
Junction capacitance
CT VR = 100 V
-
TYP.
-
0.88 0.75
0.5 8
MAX.
-
0.95 0.82
2 8 -
UNITS V
μA pF
Revision: 20-Apr-15
1 Document Number: 95788
For technical questions within your region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
VS-2EFH01HM3
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
Reverse recovery time
Peak recovery current Reverse recovery charge
trr
IRRM Qrr
IF = 1 A, dIF/dt = 50 A/μs, VR = 30 V
IF = 0.5 A, IR = 1 A, Irr = 0.25 A
TJ = 25 °C
TJ = 125 °C TJ = 25 °C TJ = 125 °C TJ = 25 °C
IF = 2 A dIF/dt = 200 A/μs
VR = 160 V
TJ = 125 °C
-
TYP. 24 16 22 2 3 16 30
MAX. 25 -
UNITS ns
A nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and storage temperature range
TJ, TStg
Thermal resistance, junction to case
RthJC
Device mounted on PCB with 8 mm x 16 mm soldering lands
Thermal resistance, junction to ambient
RthJA
Device mounted on PCB with 2 mm x 3.5 mm soldering lands
Approximate weight
Marking device
Case style SMF (DO-219AB)
MIN. -65
-
TYP. MAX. UNITS - +175 °C
- 15 °C/W
- 130
0.015 0.0005
MBH
°C/W
g oz.
100
10
TJ = 175 °C
1
0.1 0.2
TJ = 150 °C TJ = 125 °C TJ = 25 °C
0.4 0.6 0.8 1.0 1.2 1.4 1.6
VF - Forward Voltage Drop (V)
1.8
Fig. 1 - Typical Forward Voltage Drop Characteristics
100 10 1 0.1
0.01
175 °C 150 °C 125 °C
25 °C
0.001 50 60 70 80 90 100
VR - Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
IF - Instantaneous Forward Current (A) IR - Reverse Current (μA)
Revision: 20-Apr-15
2 Document Number: 95788
For technical questions within your region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
VS-2EFH01HM3
Vishay Semiconductors
CT - Junction Capacitance (pF)
100
10
1 0 20 40 60 80 100
VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Average Power Loss (W)
2.5 RMS limit
2
1.5 D = 0.20 D = 0.25
1 D = 0.33 D = 0.50 D = 0.75
0.5 DC
0 0 0.5 1 1.5 2 2.5 3 3.5
IF(AV) - Average Forward Current (A) Fig. 5 - Forward Power Loss Characteristics
Allowable Case Temperature (°C)
180
175
170
165 DC 160
155 Square wave (D = 0.50)
150 80 % rated VR applied
145 See note (1)
140 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2
IF(AV) - Average Forward Current (A)
Fig. 4 - Maximum Allowable Case Temperature vs. Average Forward Current
trr (ns)
35
30
25 20 25 °C
125 °C
15
10
5 100
1000
dIF/dt (A/μs)
Fig. 6 - Typical Reverse Recovery Time vs. dIF/dt
45
40
35 125 °C 30
Qrr (nC)
25 20 25 °C.