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VS-2EFH01HM3 Dataheets PDF



Part Number VS-2EFH01HM3
Manufacturers Vishay
Logo Vishay
Description Hyperfast Rectifier
Datasheet VS-2EFH01HM3 DatasheetVS-2EFH01HM3 Datasheet (PDF)

www.vishay.com VS-2EFH01HM3 Vishay Semiconductors Hyperfast Rectifier, 2 A FRED Pt® DO-219AB (SMF) Cathode Anode FEATURES • Hyperfast recovery time, reduced Qrr, and soft recovery • 175 °C maximum operating junction temperature • Specified for output and snubber operation • Low forward voltage drop • Low leakage current • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified, meets JESD 201 class 2 whisker test • Material categorization: for definitions of compli.

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www.vishay.com VS-2EFH01HM3 Vishay Semiconductors Hyperfast Rectifier, 2 A FRED Pt® DO-219AB (SMF) Cathode Anode FEATURES • Hyperfast recovery time, reduced Qrr, and soft recovery • 175 °C maximum operating junction temperature • Specified for output and snubber operation • Low forward voltage drop • Low leakage current • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified, meets JESD 201 class 2 whisker test • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRODUCT SUMMARY Package IF(AV) VR VF at IF (typ. 125 °C) trr TJ max. Diode variation DO-219AB (SMF) 2A 100 V 0.75 V 25 ns 175 °C Single die DESCRIPTION / APPLICATIONS State of the art hyperfast recovery rectifiers specifically designed with optimized performance of forward voltage drop and hyperfast recovery time. The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness, and reliability characteristics. These devices are intended for use in snubber, boost, lighting, piezo-injection, as high frequency rectifiers, and freewheeling diodes. Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce power dissipation in the switching element. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Peak repetitive reverse voltage VRRM Average rectified forward current IF(AV) Non-repetitive peak surge current IFSM Operating junction and storage temperature range TJ, TStg Note (1) Device on PCB with 8 mm x 16 mm soldering lands TEST CONDITIONS TC = 150 °C (1) TJ = 25 °C VALUES 100 2 50 -65 to +175 UNITS V A °C ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN. Breakdown voltage, blocking voltage VBR, VR IR = 100 μA 100 Forward voltage IF = 2 A VF IF = 2 A, TJ = 125 °C - Reverse leakage current VR = VR rated IR TJ = 125 °C, VR = VR rated - Junction capacitance CT VR = 100 V - TYP. - 0.88 0.75 0.5 8 MAX. - 0.95 0.82 2 8 - UNITS V μA pF Revision: 20-Apr-15 1 Document Number: 95788 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com VS-2EFH01HM3 Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN. Reverse recovery time Peak recovery current Reverse recovery charge trr IRRM Qrr IF = 1 A, dIF/dt = 50 A/μs, VR = 30 V IF = 0.5 A, IR = 1 A, Irr = 0.25 A TJ = 25 °C TJ = 125 °C TJ = 25 °C TJ = 125 °C TJ = 25 °C IF = 2 A dIF/dt = 200 A/μs VR = 160 V TJ = 125 °C - TYP. 24 16 22 2 3 16 30 MAX. 25 - UNITS ns A nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS Maximum junction and storage temperature range TJ, TStg Thermal resistance, junction to case RthJC Device mounted on PCB with 8 mm x 16 mm soldering lands Thermal resistance, junction to ambient RthJA Device mounted on PCB with 2 mm x 3.5 mm soldering lands Approximate weight Marking device Case style SMF (DO-219AB) MIN. -65 - TYP. MAX. UNITS - +175 °C - 15 °C/W - 130 0.015 0.0005 MBH °C/W g oz. 100 10 TJ = 175 °C 1 0.1 0.2 TJ = 150 °C TJ = 125 °C TJ = 25 °C 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VF - Forward Voltage Drop (V) 1.8 Fig. 1 - Typical Forward Voltage Drop Characteristics 100 10 1 0.1 0.01 175 °C 150 °C 125 °C 25 °C 0.001 50 60 70 80 90 100 VR - Reverse Voltage (V) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage IF - Instantaneous Forward Current (A) IR - Reverse Current (μA) Revision: 20-Apr-15 2 Document Number: 95788 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com VS-2EFH01HM3 Vishay Semiconductors CT - Junction Capacitance (pF) 100 10 1 0 20 40 60 80 100 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage Average Power Loss (W) 2.5 RMS limit 2 1.5 D = 0.20 D = 0.25 1 D = 0.33 D = 0.50 D = 0.75 0.5 DC 0 0 0.5 1 1.5 2 2.5 3 3.5 IF(AV) - Average Forward Current (A) Fig. 5 - Forward Power Loss Characteristics Allowable Case Temperature (°C) 180 175 170 165 DC 160 155 Square wave (D = 0.50) 150 80 % rated VR applied 145 See note (1) 140 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 IF(AV) - Average Forward Current (A) Fig. 4 - Maximum Allowable Case Temperature vs. Average Forward Current trr (ns) 35 30 25 20 25 °C 125 °C 15 10 5 100 1000 dIF/dt (A/μs) Fig. 6 - Typical Reverse Recovery Time vs. dIF/dt 45 40 35 125 °C 30 Qrr (nC) 25 20 25 °C.


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