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VS-2EFH02HM3
Vishay Semiconductors
Hyperfast Rectifier, 2 A FRED Pt®
DO-219AB (SMF)
Cathode
Anode
FEATURES • Hyperfast recovery time, reduced Qrr, and soft
recovery
• 175 °C maximum operating junction temperature
• Specified for output and snubber operation
• Low forward voltage drop
• Low leakage current
• Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
• AEC-Q101 qualified, meets JESD 201 class 2 whisker test
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
PRODUCT SUMMARY
Package IF(AV) VR
VF at IF (typ. 125 °C) trr
TJ max. Diode variation
DO-219AB (SMF) 2A
200 V 0.75 V 25 ns 175 °C Single die
DESCRIPTION / APPLICATIONS
State of the art hyperfast recovery rectifiers designed with optimized performance of forward voltage drop and hyperfast recovery.
The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness, and reliability characteristics.
These devices are intended for use in snubber boost, lighting, piezo-injection, as high frequency rectifiers, and freewheeling diodes.
Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce power dissipation in the switching element.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Peak repetitive reverse voltage
VRRM
Average rectified forward current
IF(AV)
Non-repetitive peak surge current
IFSM
Operating junction and storage temperature range TJ, TStg
Note (1) Device on PCB with 8 mm x 16 mm soldering lands
TEST CONDITIONS
TC = 150 °C (1) TJ = 25 °C
VALUES 200 2 50
-65 to +175
UNITS V A °C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
Breakdown voltage, blocking voltage
VBR, VR IR = 100 μA
200
Forward voltage
IF = 2 A VF
IF = 2 A, TJ = 125 °C
-
Reverse leakage current
VR = VR rated IR
TJ = 125 °C, VR = VR rated
-
Junction capacitance
CT VR = 200 V
-
TYP.
-
0.88 0.75
1 8
MAX.
-
0.95 0.82
2 8 -
UNITS V
μA pF
Revision: 20-Apr-15
1 Document Number: 95790
For technical questions within your region:
[email protected],
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
VS-2EFH02HM3
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
Reverse recovery time
Peak recovery current Reverse recovery charge
trr
IRRM Qrr
IF = 1 A, dIF/dt = 50 A/μs, VR = 30 V
IF = 0.5 A, IR = 1 A, Irr = 0.25 A
TJ = 25 °C
TJ = 125 °C TJ = 25 °C TJ = 125 °C TJ = 25 °C
IF = 2 A dIF/dt = 200 A/μs
VR = 160 V
TJ = 125 °C
-
TYP. 24 16 22 2 3 16 30
MAX. 25 -
UNITS ns
A nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and storage temperature ra.