50N04-07L

New Product SUD50N04-07L Vishay Siliconix N-Channel 40-V (D-S), 175 °C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) 40 0.0074 at VGS = 10 V 0.0011 at VGS = 4.5 V ID (A)c 65 54 FEATURES TrenchFET® Power MOSFETS 175 °C Junction Temperature Low Threshold Available RoHS* COMPLIANT TO-252 D GDS Top View Drain Connected to Tab Ordering Information: SUD50N04-07L SUD50N04-07L (Lead (Pb)-free) G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 175 °C) TC = 25 °C TC = 100 °C ID Pulsed Drain Current IDM Avalanche Current IAS Single Avalanche Energya L = 0.1 mH EAS Power Dissipation TC = 25 °C PD Operating Junction and Storage Temperature Range TJ, Tstg Limit 40 ± 20 65c 46c 100 40 80 65 - 55 to 175 Unit V A mJ W °C THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambientb t ≤ 10 sec Steady State Symbol RthJA Junction-to-Case RthJC Notes: a. Duty cycle ≤ 1 %. b. Surface Mounted on 1" FR4 board. c. Based on maximum allowable Junction Temperature. Package limitation current is 50 A. * Pb containing terminations are not RoHS compliant, exemptions may apply. Document Number: 72344 S-71661-Rev. C, 06-Aug-07 Typical 18 40 1.9 Maximum 22 50 2.3 Unit °C/W www.vishay.com 1 SUD50N04-07L Vishay Siliconix New Product SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Static D...