IRF7805PbF

PD – 96031A IRF7805PbF HEXFET® Chip-Set for DC-DC Converters N Channel Application Specific MOSFETs Ideal for Mobile DC-DC Converters Low Conduction Losses Low Switching Losses Lead-Free Description This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make this device ideal for high efficiency DC-DC Converters that power the latest generation of mobile microprocessors. The IRF7805PbF offers maximum efficiency for mobile CPU core DC-DC converters. SO-8 S1 S2 S3 G4 A 8D 7D 6D 5D Top View Device Features VDS RDS(on) Qg Qsw Qoss IRF7805PbF 30V 11mΩ 31nC 11.5nC 36nC Absolute Maximum Ratings Parameter VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C Drain-to-Source Voltage Gate-to-Source Voltage eContinuous Drain Current, VGS @ 10V eContinuous Drain Current, VGS @ 10V cPulsed Drain Current ePower Dissipation ePower Dissipation TJ TSTG Linear Derating Factor Operating Junction and Storage Temperature Range Thermal Resistance Parameter gRθJL Junction-to-Drain Lead egRθJA Junction-to-Ambient Max. 30 ± 12 13 10 100 2.5 1.6 0.02 -55 to + 150 Units V A W W/°C °C Typ. ––– ––– Max. 20 50 Units °C/W www.irf.com 1 01/09/08 IRF7805PbF Static @ TJ = 25°C (unless otherwise specified) BVDSS RDS(on) VGS(th) IDSS hParameter Drain-to-Source Breakdown Voltage hStatic Drain-to-Source On-Resistance hGate Threshold Voltage...