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IRF7807ATRPbF-1 Dataheets PDF



Part Number IRF7807ATRPbF-1
Manufacturers International Rectifier
Logo International Rectifier
Description HEXFET Chip-Set for DC-DC Converters
Datasheet IRF7807ATRPbF-1 DatasheetIRF7807ATRPbF-1 Datasheet (PDF)

VDS RDS(on) max (@VGS = 4.5V) Qg (typical) ID (@TA = 25°C) IRF7807TRPbF-1 IRF7807ATRPbF-1 HEXFET® Chip-Set for DC-DC Converters 30 V 25 mΩ 12 nC 8.3 A S1 S2 S3 G4 A 8D 7D 6D 5D Top View SO-8 Features Industry-standard pinout SO-8 Package Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1, Industrial qualification Benefits ⇒ Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Base Part Number IRF7807PbF-1 IRF7.

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VDS RDS(on) max (@VGS = 4.5V) Qg (typical) ID (@TA = 25°C) IRF7807TRPbF-1 IRF7807ATRPbF-1 HEXFET® Chip-Set for DC-DC Converters 30 V 25 mΩ 12 nC 8.3 A S1 S2 S3 G4 A 8D 7D 6D 5D Top View SO-8 Features Industry-standard pinout SO-8 Package Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1, Industrial qualification Benefits ⇒ Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Base Part Number IRF7807PbF-1 IRF7807APbF-1 Package Type SO-8 Standard Pack Form Quantity Tape and Reel 4000 Tape and Reel 4000 Orderable Part Number IRF7807TRPbF-1 IRF7807ATRPbF-1 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain or Source 25°C Current (VGS ≥ 4.5V) Pulsed Drain Current 70°C Power Dissipation 25°C 70°C Junction & Storage Temperature Range Continuous Source Current (Body Diode) Pulsed source Current Symbol VDS VGS ID IDM PD TJ, TSTG IS ISM IRF7807 IRF7807A 30 ±12 8.3 8.3 6.6 6.6 66 66 2.5 1.6 –55 to 150 2.5 2.5 66 66 Units V A W °C A Thermal Resistance Parameter Maximum Junction-to-Ambientƒ RθJA Max. 50 Units °C/W 1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback October 16, 2014 IRF7807/ATRPbF-1 Electrical Characteristics Parameter Drain-to-Source Breakdown Voltage* V(BR)DSS Static Drain-Source on Resistance* RDS(on) Gate Threshold Voltage* Drain-Source Leakage Current* VGS(th) IDSS IRF7807 Min Typ Max 30 – – 17 25 1.0 30 150 IRF7807A Min Typ Max Units 30 – – V 17 25 mΩ 1.0 V 30 μA 150 Conditions VGS = 0V, ID = 250μA VGS = 4.5V, ID = 7A‚ VDS = VGS, ID = 250μA VDS = 24V, VGS = 0 VDS = 24V, VGS = 0, Tj = 100°C Gate-Source Leakage Current* IGSS ±100 ±100 nA VGS = ±12V Total Gate Charge* Pre-Vth Gate-Source Charge Qg Qgs1 12 17 2.1 12 17 2.1 VGS = 5V, ID = 7A VDS = 16V, ID = 7A Post-Vth Gate-Source Charge Qgs2 0.76 0.76 nC Gate to Drain Charge Switch Charge* (Qgs2 + Qgd) Output Charge* Gate Resistance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Qgd QSW Qoss Rg td(on) tr td (off) tf 2.9 3.66 5.2 14 16.8 1.2 12 17 25 6 2.9 3.66 14 16.8 1.2 Ω 12 17 ns 25 6 VDS = 16V, VGS = 0 VDD = 16V ID = 7A Rg = 2Ω VRGeSs=ist4iv.5eVLoad Source-Drain Rating & Characteristics Parameter Min Typ Max Min Typ Max Units Conditions Diode Forward Voltage* VSD 1.2 1.2 V IS = 7A‚, VGS = 0V Reverse Recovery Charge„ Qrr 80 80 Reverse Recovery Charge (with Parallel Qrr(s) 50 50 Schotkky)„ Notes:  Repetitive rating; pulse width limited by max. junction temperature. ‚ Pulse width ≤ 300 μs; duty cycle ≤ 2%. ƒ When mounted on 1 inch square copper board, t < 10 sec. „ * DTyepvi=cems eaarseu1re0d0%- Qteosssted to these parameters. nC di/dt = 700A/μs VDS = 16V, VGS = 0V, IS = 7A di/dt = 700A/μs (with 10BQ040) VDS = 16V, VGS = 0V, IS = 7A 2 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback October 16, 2014 IRF7807/ATRPbF-1 Power MOSFET Selection for DC/DC Converters Control FET Special attention has been given to the power losses in the switching elements of the circuit - Q1 and Q2. Power losses in the high side switch Q1, also called the Control FET, are impacted by the Rds(on) of the MOSFET, but these conduction losses are only about one half of the total losses. Power losses in the control switch Q1 are given by; Ploss = P +conduction P +switching Pdrive+ Poutput This can be expanded and approximated by; ( )Ploss = I2 rms × Rds(on ) + ⎛ ⎜I ⎝ × Qgd ig × Vin × f ⎞⎟ ⎠ ⎛ +⎜I ⎝ × Qgs 2 ig × Vin × f ⎞⎟ ⎠ ( )+ Qg × Vg × f + ⎛ ⎝ Qoss 2 × Vin × f ⎞ ⎠ This simplified loss equation includes the terms Qgs2 and Qoss which are new to Power MOSFET data sheets. Qgs2 is a sub element of traditional gate-source charge that is included in all MOSFET data sheets. The importance of splitting this gate-source charge into two sub elements, Qgs1 and Qgs2, can be seen from Fig 1. Qgs2 indicates the charge that must be supplied by the gate driver between the time that the threshold voltage has been reached (t1) and the time the drain current rises to Idmax (t2) at which time the drain voltage begins to change. Minimizing Qgs2 is a critical factor in reducing switching losses in Q1. Qoss is the charge that must be supplied to the output capacitance of the MOSFET during every switching cycle. Figure 2 shows how Qoss is formed by the parallel combination of the voltage dependant (non-linear) capacitance’s Cds and Cdg when multiplied by the power supply input buss voltage. t1 VGTH t0 Drain Current 4 t2 t3 1 Gate Voltage 2 Drain Voltage QGS1 QGS2 QGD Figure 1: Typical MOSFET switching waveform Synchronous FET The power loss equation for Q2 is approximated by; Ploss = Pconduction + Pdrive + P* output ( )Ploss = I2 rms × Rds(on) ( )+ Qg × Vg × f ( )+ ⎛⎜ ⎝ Qoss 2 × Vin × f⎞ + ⎠ Qrr × Vin × f *dissipated primarily in Q1. 3 www.irf.com © 2014 Internationa.


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