512 Kilobit (64K x8) Page-Mode EEPROM
512 Kilobit (64K x8) Page-Mode EEPROM
SST29EE512 / SST29LE512 / SST29VE512
FEATURES:
• Single Voltage Read and Write Op...
Description
512 Kilobit (64K x8) Page-Mode EEPROM
SST29EE512 / SST29LE512 / SST29VE512
FEATURES:
Single Voltage Read and Write Operations
– 5.0V-only for SST29EE512 – 3.0-3.6V for SST29LE512 – 2.7-3.6V for SST29VE512
Superior Reliability
– Endurance: 100,000 Cycles (typical) – Greater than 100 years Data Retention
Low Power Consumption
– Active Current: 20 mA (typical) for 5V and 10 mA (typical) for 3.0/2.7V
– Standby Current: 10 µA (typical)
Fast Page-Write Operation
– 128 Bytes per Page, 512 Pages – Page-Write Cycle: 5 ms (typical) – Complete Memory Rewrite: 2.5 sec (typical) – Effective Byte-Write Cycle
Time: 39 µs (typical)
Data Sheet
Fast Read Access Time – 5.0V-only operation: 70 and 90 ns – 3.0-3.6V operation: 150 and 200 ns – 2.7-3.6V operation: 200 and 250 ns
Latched Address and Data
Automatic Write Timing – Internal VPP Generation
End of Write Detection – Toggle Bit – Data# Polling
Hardware and Software Data Protection
TTL I/O Compatibility
JEDEC Standard – Flash EEPROM Pinouts and command sets
Packages Available – 32 Pin PDIP – 32-Pin PLCC – 32-Pin TSOP (8mm x 14mm, 8mm x 20mm)
PRODUCT DESCRIPTION
The SST29EE512/29LE512/29VE512 are 64K x8 CMOS, Page-Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST29EE512/29LE512/29VE512 write with a single power supply....
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