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KTC3199

Lunsure Electronic Technology

NPN General Purpose Application

Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 Features • High DC Current Gai...


Lunsure Electronic Technology

KTC3199

File Download Download KTC3199 Datasheet


Description
Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 Features High DC Current Gain: hFE=70~700 Excellent hFE Linearity: hFE(0.1mA)/hFE(2.0mA)=0.95(Typ) Low Noise: NF=1.0dB(Typ.), 10dB(Max.) Complementary to KTA1267 Pin Configuration Bottom View CB E Maximum Ratings Symbol VCEO VCBO VEBO IC IE PC TJ TSTG Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Emitter Current Collector power dissipation Junction Temperature Storage Temperature Rating 50 50 5.0 150 150 400 -55 to +150 -55 to +150 Unit V V V mA A mW OC OC Electrical Characteristics @ 25OC Unless Otherwise Specified Symbol Parameter OFF CHARACTERISTICS Min Typ Max Units ICBO Collector-Base Cutoff Current (VCB=50Vdc,IE=0) IEBO Emitter-Base Cutoff Current (VEB=5.0Vdc, IC=0) ON CHARACTERISTICS hFE DC Current gain(1) (IC=2.0mAdc, VCE=6.0Vdc) V CE(sat) Collector-Emitter Saturation Voltage (IC=100mAdc, IB=10mAdc) fT Transistor Frequency (VCE=10Vdc, IC=1.0mAdc) Cob Collector Output Capacitance (VCB=10Vdc, IE=0, f=1.0MHz) NF Noise Figure (VCE=6.0Vdc, IC=0.1mAdc, f=1.0kHz, Rg=10KOHM) ----- 70 --80 --- --- --- 0.1 uAdc --- 0.1 uAdc --- 700 --- 0.1 0.25 Vdc --- --- MHz 2.0 3.5 pF 1.0 10 dB (1) hFEClassification O: 70~140, Y: 120~240, GR: 200~400, BL: 300~700 KT C3199 NPN General Purpose Application TO-92S AE B C D G DIMENSIONS INCHES DIM MIN MAX A .16 B .12 C .59 --- D .02 E .08 G .20 MM MIN MAX...




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