L-7104F3C

T-1 (3mm) INFRARED EMITTING DIODE Part Number: L-7104F3C Features z Mechanically and spectrally matched to the phototransistor. z RoHS compliant. Description F3 Made with Gallium Arsenide Infrared Emitting diodes. KingbrightPackage Dimensions Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is ±0.25(0.01") unless otherwise noted. 3. Lead spacing is measured where the leads emerge from the package. 4. The specifications, characteristics and technical data described in the datasheet are subject to change without prior notice. SPEC NO: DSAB2442 APPROVED: WYNEC REV NO: V.15A CHECKED: Allen Liu DATE: AUG/29/2013 DRAWN: D.N.Huang PAGE: 1 OF 6 ERP: 1101029174 Selection Guide Part No. Dice Lens Type Po (mW/sr) [2] @ 20mA Min. Typ. L-7104F3C F3 (GaAs) Water Clear 5 10 *3 *8 Notes: 1. θ1/2 is the angle from optical centerline where the luminous intensity is 1/2 of the optical peak value. 2. Radiant Intensity/ luminous flux: +/-15%. *Radiant Intensity value is traceable to the CIE127-2007 compliant national standards. Po (mW/sr) [2] Viewing @ 50mA Angle [1] Min. Typ. 2θ1/2 18 32 *12 *25 34° Electrical / Optical Characteristics at TA=25°C Parameter P/N Symbol Typ. Forward Voltage [1] F3 VF 1.2 tReverse Current F3 IR hCapacitance F3 C 90 rigPeak Spectral Wavelength F3 λP 940 Spectral Bandwidth F3 Δλ1/2 50 Note: b1. Forward Voltage: +/-0.1V. King2. Wavelength value is traceable to the CIE127-2007 compliant national standards. Max...