TS12N20CS

PRELIMINARY DATA SHEET TSC TS12N20CS Single N-Channel 4.5V Specified MicroSurf™ Drain-Source Voltage 20 Volt Current ID 12 Ampere Features 12A, 20V RDS(ON)=3.9mΩ at 4.5Volts 12A, 20V Qg =19.8nC at 4.5Volts Low profile package: less than 1mm height when mounted on PCB Occupies only 1/3 the area of SO-8 Excellent thermal characteristics High power and current handling capability Lead free solder balls available Description Taiwan Semiconductor’s new low cost, state of the art MicroSurf™ lateral MOSFET process technology in chipscale bondwireless packaging minimizes PCB space and RDS(ON) plus provides an ultra-low Qg X RDS(ON) figure of merit. Patent Pending Internal Block Diagram Ds G D Pin Configuration S Standard Application MicroSurf™ for High Frequency DC-DC Converters Bottom: Bump Side -1- Rev. 1 05/2003 TSC Absolute Maximum Ratings TA =25°C unless otherwise noted Parameter Symbol Value Unit Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed VDSS VGSS ID 20 V +12 V 6A 25 A Power Dissipation (Steady State) Operating and Storage Junction Temperature Range Thermal Characteristics PD TJ, TSTG 2.2 - 55 to +150 W °C Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ball Thermal Resistance, Junction-to-Case RθJA RθJR RθJC 56 °C/ W 4.5 °C/ W 0.6 °C/ W TS12N20CS Electrical Specifications TA= 25°C unless otherwise specified Characteristics Symbol Conditions Min Typ Max Unit Drain-Source Breakdown Voltage...