B642

Transistor 2SB642 Silicon PNP epitaxial planer type For low-power general amplification s Features q High foward current transfer ratio hFE. q M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. s Absolute Maximum Ratings (Ta=25˚C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings –60 –50 –7 –200 –100 400 150 –55 ~ +150 Unit V V V mA mA mW ˚C ˚C 6.9±0.1 1.5 1.5 R0.9 R0.9 Unit: mm 2.5±0.1 1.0 1.0 4.5±0.1 4.1±0.2 1.25±0.05 2.4±0.2 2.0±0.2 3.5±0.1 1.0±0.1 0.4 R0.7 0.85 0.55±0.1 321 0.45±0.05 2.5 2.5 1:Base 2:Collector 3:Emitter EIAJ:SC–71 M Type Mold Package s Electrical Characteristics (Ta=25˚C) Parameter Symbol Conditions min typ max Unit Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance ICBO ICEO VCBO VCEO VEBO hFE* VCE(sat) fT Cob VCB = –20V, IE = 0 –1 nA VCE = –20V, IB = 0 –1 µA IC = –10µA, IE = 0 –60 V IC = –2mA, IB = 0 –50 V IE = –10µA, IC = 0 –7 V VCE = –10V, IC = –2mA 160 460 IC = –100mA, IB = –10mA –1 V VCB = –10V, IE = 2mA, f = 200MHz 80 MHz VCB = –10V, IE = 0, f = 1MHz 3.5 pF *hFE Rank class...