AOV15S60

AOV15S60 600V 12A α MOS TM Power Transistor General Description Product Summary The AOV15S60 has been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability this part can be adopted quickly into new and existing offline power supply designs. VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V 100% UIS Tested 100% Rg Tested 700V 63A 0.36Ω 16nC 3.6µJ Top View DFN8X8 Bottom View D D Pin1:G AOV15S60 S S G Pin2: Driver Source G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Repetitive avalanche energy C Single pulsed avalanche energy G TC=25°C Power Dissipation B Derate above 25oC VGS ID IDM IDSM IAR EAR EAS PD TA=25°C Power Dissipation A TA=70°C MOSFET dv/dt ruggedness Peak diode recovery dv/dt H PDSM dv/dt Junction and Storage Temperature Range TJ, TSTG Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds J Thermal Characteristics TL Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D t ≤ 10s Steady-State Symbol RθJA Maximum Junction-to-Case Steady-State RθJC Maximum 600 ±30 12 9.4 63 0.52 0.2 2.4 86 173 208 1.67 8.3 5....