S9012 Transistor Datasheet

S9012 Datasheet, PDF, Equivalent


Part Number

S9012

Description

PNP Silicon General Purpose Transistor

Manufacture

SeCoS

Total Page 1 Pages
Datasheet
Download S9012 Datasheet


S9012
Elektronische Bauelemente
S9012
PNP Silicon
General Purpose Transistor
FEATURES
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
Collector
33
Power dissipation
PCM : 0.3 W
Collector Current
ICM : - 0.5 A
Collector-base voltage
V(BR)CBO : - 40 V
Operating & storage junction temperature
Tj, Tstg : - 55OC ~ + 150OC
V
1
2
A
L
3
Top View
12
G
1
Base
BS
2
Emitter
C
D
HK
J
SOT-23
Dim Min Max
A 2.800 3.040
B 1.200 1.400
C 0.890 1.110
D 0.370 0.500
G 1.780 2.040
H 0.013 0.100
J 0.085 0.177
K 0.450 0.600
L 0.890 1.020
S 2.100 2.500
V 0.450 0.600
All Dimension in mm
ELECTRICAL CHARACTERISTICS ( Tamp.=25OC unless otherwise specified)
Parameter
Symbol
Test conditions
MIN TYP MAX UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
V(BR)CBO
V(BR)CEO
Ic= -100 A IE=0
Ic= -1mA IB=0
-40
-25
V
V
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
V(BR)EBO
ICBO
ICEO
IE= -100 A IC=0
VCB= - 40V , IE=0
VCE= - 20V , IB=0
-5
V
-0.1 A
-0.1 A
Emitter cut-off current
IEBO VEB= - 5V , IC=0
- 0.1 A
DC current gain
HFE(1)
HFE(2)
VCE= -1V , IC=- 50 mA
VCE= -1V , IC= -500mA
120
40
400
Collector-emitter saturation voltage
VCE(sat) IC=-500mA, IB=- 50mA
-0.6 V
Base-emitter saturation voltage
VBE(sat)
IC=- 500mA, IB=- 50m A
-1.2 V
Transition frequency
VCE= -6V, IC= - 20mA
fT
f=30MHz
150
MHz
CLASSIFICATION OF hFE(1)
Rank
Range
L
120-200
H
200-350
J
300-400
DEVICE MARKING
http://www.SeCoSGmbH.com
17-Dec-2007 Rev.B
S9012 =2T1
Any changing of specification will not be informed individual
Page 1 of 1


Features Elektronische Bauelemente S9012 PNP Sil icon General Purpose Transistor FEATUR ES RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free Coll ector 33 Power dissipation PCM : 0.3 W Collector Current ICM : - 0.5 A Collec tor-base voltage V(BR)CBO : - 40 V Oper ating & storage junction temperature Tj , Tstg : - 55OC ~ + 150OC V 1 2 A L 3 Top View 12 G 1 Base BS 2 Emitter C D HK J SOT-23 Dim Min Max A 2.800 3.040 B 1.200 1.400 C 0.890 1.110 D 0.3 70 0.500 G 1.780 2.040 H 0.013 0.100 J 0.085 0.177 K 0.450 0.600 L 0.890 1.020 S 2.100 2.500 V 0.450 0.600 All Dimens ion in mm ELECTRICAL CHARACTERISTICS ( Tamp.=25OC unless otherwise specified) Parameter Symbol Test conditions M IN TYP MAX UNIT Collector-base breakdo wn voltage Collector-emitter breakdown voltage V(BR)CBO V(BR)CEO Ic= -100 A IE=0 Ic= -1mA IB=0 -40 -25 V V Emitt er-base breakdown voltage Collector cut -off current Collector cut-off current V(BR)EBO ICBO ICEO IE= -100 A IC=0 VCB= - 40V , IE=0 VCE= - 2.
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