S9012 TRANSISTOR Datasheet

S9012 Datasheet, PDF, Equivalent


Part Number

S9012

Description

PNP EPITAXIAL PLANAR TRANSISTOR

Manufacture

TGS

Total Page 3 Pages
Datasheet
Download S9012 Datasheet


S9012
TIGER ELECTRONIC CO.,LTD
S9012
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The S9012 is designed for use in 1W output amplifier of portable radios
in class B push-pull operation.
Features
High total power dissipation. (PT:625mW)
High collector current. (IC:500mA)
Complementary to S9013
Excellent linearity.
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature ........................................................................................................... -55~+150°C
Junction Temperature ................................................................................................. +150°C Maximum
Maximum Power Dissipation
Total Power Dissipation (Ta=25°C).............................................................................................. 625mW
Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage...................................................................................................... 40 V
VCEO Collector to Emitter Voltage................................................................................................... 20 V
VEBO Emitter to Base Voltage........................................................................................................... 5 V
IC Collector Current .................................................................................................................... 500 mA
Icp Base Current ......................................................................................................................... 100 mA
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
VBE(sat)
VBE(on)
hFE1
hFE2
Cob
fT
Min.
40
20
5.0
-
-
-
-
-
112
40
-
100
Typ.
-
-
-
-
-
-
-
-
180
-
-
-
Max.
-
-
-
100
100
0.6
1.2
0.9
300
-
8
-
Unit
V
V
V
nA
nA
V
V
V
pF
MHz
Test Conditions
IC=100uA, IE=0
IC=1mA, IB=0
IE=100uA, IC=0
VCE=25V, IE=0
VEB=3V, IC=0
IC=500mA, IB=50mA
IC=500mA, IB=50mA
VCE=1V, IC=10mA
VCE=1V, IC=50mA
VCE=1V, IC=500mA
VCB=10V, f=1MHz
VCE=1V, IC=10mA, f=100MHz
Classification on hFE1
Rank
Range
G
112-166
H
144-202
I1
176-246
I2
214-300
TIGER ELECTRONIC CO.,LTD

S9012
TIGER ELECTRONIC CO.,LTD
Characteristics Curve
Current Gain & Collector Current
1000
10000
Saturation Voltage & Collector Current
100
hFE @ VCE=1V
10
0.1
1 10 100
Collector Current (mA)
1000
10000
On Voltage & Collector Current
1000
100
10
0.1
VBE(sat) @ IC=10IB
VCE(sat) @ IC=10IB
1 10 100
Collector Current (mA)
1000
Capacitance & Reverse-Biased Voltage
100
1000
VBE(on) @ VCE=1V
10 Cob
100
0.1
1 10 100
Collector Current (mA)
1000
Cutoff Frequency & Collector Current
1000
VCE=1V
100
10
1
10 100
Collector Current (mA)
1000
1
0.1 1 10 100
Reverse-Biased Voltage (V)
10000
1000
100
Safe Operating Area
PT=1ms
PT=100ms
PT=1s
10
1
1 10 100
Forward Voltage-VCE (V)
TIGER ELECTRONIC CO.,LTD


Features TIGER ELECTRONIC CO.,LTD S9012 PNP EPIT AXIAL PLANAR TRANSISTOR Description Th e S9012 is designed for use in 1W outpu t amplifier of portable radios in class B push-pull operation. Features • H igh total power dissipation. (PT:625mW) • High collector current. (IC:500mA) • Complementary to S9013 • Excelle nt linearity. Absolute Maximum Ratings • Maximum Temperatures Storage Tempe rature ................................ ....................................... .................................... -5 5~+150°C Junction Temperature ........ ....................................... ....................................... ........... +150°C Maximum • Maximum Power Dissipation Total Power Dissipat ion (Ta=25°C)......................... ....................................... .............................. 625mW Maximum Voltages and Currents (Ta=25 C) VCBO Collector to Base Voltage..... ....................................... .......................................................... 40 V VCEO Collector to.
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