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S9012

TGS

PNP Transistor

TIGER ELECTRONIC CO.,LTD S9012 PNP EPITAXIAL PLANAR TRANSISTOR Description The S9012 is designed for use in 1W output ...


TGS

S9012

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Description
TIGER ELECTRONIC CO.,LTD S9012 PNP EPITAXIAL PLANAR TRANSISTOR Description The S9012 is designed for use in 1W output amplifier of portable radios in class B push-pull operation. Features High total power dissipation. (PT:625mW) High collector current. (IC:500mA) Complementary to S9013 Excellent linearity. Absolute Maximum Ratings Maximum Temperatures Storage Temperature ........................................................................................................... -55~+150°C Junction Temperature ................................................................................................. +150°C Maximum Maximum Power Dissipation Total Power Dissipation (Ta=25°C).............................................................................................. 625mW Maximum Voltages and Currents (Ta=25°C) VCBO Collector to Base Voltage...................................................................................................... 40 V VCEO Collector to Emitter Voltage................................................................................................... 20 V VEBO Emitter to Base Voltage........................................................................................................... 5 V IC Collector Current .................................................................................................................... 500 mA Icp Base Current ................................................................................




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