S9012 Transistor Datasheet

S9012 Datasheet, PDF, Equivalent


Part Number

S9012

Description

PNP Silicon Epitaxial Planar Transistor

Manufacture

TOPSKY

Total Page 4 Pages
Datasheet
Download S9012 Datasheet


S9012
PNP Silicon Epitaxial Planar Transistor
FEATURES
z High Collector Current.(IC= -500mA
z Complementary To S9013.
z Excellent HFE Linearity.
Pb
Lead-free
APPLICATIONS
z High Collector Current.
ORDERING INFORMATION
Type No.
Marking
S9012
2T1
Production specification
S9012
SOT-23
Package Code
SOT-23
MAXIMUM RATING @ Ta=25unless otherwise specified
Symbol
Parameter
Value
VCBO
Collector-Base Voltage
-40
VCEO
Collector-Emitter Voltage
-25
VEBO
Emitter-Base Voltage
-5
IC Collector Current -Continuous
-500
PC Collector Dissipation
300
Tj,Tstg
Junction and Storage Temperature
-55~150
Units
V
V
V
mA
mW
SHENZHEN TOPSKY TECHNOLOGY CO.,LTD
Rev.A
www.szct.com.cn
1

S9012
Production specification
PNP Silicon Epitaxial Planar Transistor
S9012
ELECTRICAL CHARACTERISTICS @ Ta=25unless otherwise specified
Parameter
Symbol
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
V(BR)CBO
V(BR)CEO
V(BR)EBO
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
ICBO
ICEO
IEBO
hFE
VCE(sat)
VBE(sat)
Transition frequency
fT
Test conditions
IC=-100μA,IE=0
IC=-1mA,IB=0
IE=-100μA,IC=0
VCB=-40V,IE=0
VCE=-20V,IB=0
VEB=-5V,IC=0
VCE=-1V,IC=-50mA
IC=-500mA, IB= -50mA
IC=-500mA, IB= -50mA
VCE=-6V, IC= -20mA
f=30MHz
MIN TYP MAX UNIT
-40 V
-25 V
-5 V
-0.1 μA
-0.1 μA
-0.1 μA
120 400
-0.6 V
-1.2 V
150 MHz
Collector output capacitance
Cob VCB=-10V,IE=0,f=1MHz
5 pF
CLASSIFICATION OF hFE(1)
Rank
Range
MARKING
L
120-200
H
200-350
2T1
J
300-400
SHENZHEN TOPSKY TECHNOLOGY CO.,LTD
Rev.A
www.szct.com.cn
2


Features PNP Silicon Epitaxial Planar Transistor FEATURES z High Collector Current.(IC= -500mA) z Complementary To S9013. z Excellent HFE Linearity. Pb Lead-free APPLICATIONS z High Collector Current. ORDERING INFORMATION Type No. Marki ng S9012 2T1 Production specificatio n S9012 SOT-23 Package Code SOT-23 MAX IMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value V CBO Collector-Base Voltage -40 VCEO Collector-Emitter Voltage -25 VEBO Emitter-Base Voltage -5 IC Collector Current -Continuous -500 PC Collector Dissipation 300 Tj,Tstg Junction an d Storage Temperature -55~150 Units V V V mA mW ℃ SHENZHEN TOPSKY TECHNOL OGY CO.,LTD Rev.A www.szct.com.cn 1 P roduction specification PNP Silicon Ep itaxial Planar Transistor S9012 ELECT RICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Collector-base breakdown voltage Coll ector-emitter breakdown voltage Emitter -base breakdown voltage V(BR)CBO V(BR)CEO V(BR)EBO Collector cut-off .
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