STU13N60M2

STP13N60M2, STU13N60M2, STW13N60M2 N-channel 600 V, 0.35 Ω typ., 11 A MDmesh II Plus™ low Qg Power MOSFETs in TO-220, IPAK and TO-247 packages Datasheet − production data TAB 3 2 1 TO-220 TAB IPAK 3 2 1 3 2 1 TO-247 Figure 1. Internal schematic diagram , TAB Features Order codes VDS @ TJmax RDS(on) max ID STP13N60M2 STU13N60M2 650 V 0.38 Ω 11 A STW13N60M2 Extremely low gate charge Lower RDS(on) x area vs previous generation Low gate input resistance 100% avalanche tested Zener-protected Applications Switching applications Description AM15572v1 These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. They are therefore suitable for the most demanding high efficiency converters. Order codes STP13N60M2 STU13N60M2 STW13N60M2 Table 1. Device summary Marking Package 13N60M2 TO-220 IPAK TO-247 February 2014 This is information on a product in full production. DocID023937 Rev 5 Packaging Tube 1/18 www.st.com 18 Contents Contents STP13N60M2, STU13N60M2, STW13N60M2 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . ....