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TPCS8208 Dataheets PDF



Part Number TPCS8208
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description N-Channel MOSFET
Datasheet TPCS8208 DatasheetTPCS8208 Datasheet (PDF)

TPCS8208 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPCS8208 Lithium Ion Battery Applications • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 13 mΩ (typ.) • High forward transfer admittance: |Yfs| = 15 S (typ.) • Low leakage current: IDSS = 10 μA (max) (VDS = 20 V) • Enhancement mode: Vth = 0.5~1.2 V (VDS = 10 V, ID = 200 μA) • Common drain Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Un.

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TPCS8208 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPCS8208 Lithium Ion Battery Applications • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 13 mΩ (typ.) • High forward transfer admittance: |Yfs| = 15 S (typ.) • Low leakage current: IDSS = 10 μA (max) (VDS = 20 V) • Enhancement mode: Vth = 0.5~1.2 V (VDS = 10 V, ID = 200 μA) • Common drain Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Single-device Drain power operation (Note 3a) dissipation (t = 10 s) Single-device value (Note 2a) at dual operation (Note 3b) Single-device Drain power operation (Note 3a) dissipation (t = 10 s) Single-device value (Note 2b) at dual operation (Note 3b) Single pulse avalanche energy (Note 4) Avalanche current Repetitive avalanche energy Single-device value at dual operation (Note 2a, 3b, 5) Channel temperature Storage temperature range VDSS VDGR VGSS ID IDP PD (1) PD (2) PD (1) PD (2) EAS IAR EAR Tch Tstg 20 20 ±12 6 24 1.1 0.75 0.6 0.35 46.8 6 0.075 150 −55 to 150 V V V A W W mJ A mJ °C °C JEDEC ― JEITA ― TOSHIBA 2-3R1E Weight: 0.035 g (typ.) Circuit Configuration 8765 1234 Note: (Note 1), (Note 2), (Note 3), (Note 4), (Note 5): See the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic-sensitive device. Please handle with caution. 1 2009-09-29 Thermal Characteristics Characteristics Symbol Single-device operation (Note 3a) Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Single-device value at dual operation (Note 3b) Rth (ch-a) (1) Rth (ch-a) (2) Single-device operation (Note 3a) Thermal resistance, channel to ambient (t = 10 s) (Note 2b) Single-device value at dual operation (Note 3b) Rth (ch-a) (1) Rth (ch-a) (2) Max 114 167 208 357 Unit °C/W °C/W Marking (Note 6) S8208 Part No. (or abbreviation code) TPCS8208 Lot No. Note 7 Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: a) Device mounted on a glass-epoxy board (a) FR-4 25.4 × 25.4 × 0.8 (unit: mm) b) Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 (unit: mm) (a) (b) Note 3: a) The power dissipation and thermal resistance values are shown for a single device (During single-device opera.


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