Document
TPCS8208
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)
TPCS8208
Lithium Ion Battery Applications
• Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 13 mΩ (typ.) • High forward transfer admittance: |Yfs| = 15 S (typ.) • Low leakage current: IDSS = 10 μA (max) (VDS = 20 V) • Enhancement mode: Vth = 0.5~1.2 V (VDS = 10 V, ID = 200 μA) • Common drain
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage
Drain current
DC Pulse
(Note 1) (Note 1)
Single-device
Drain power
operation (Note 3a)
dissipation
(t = 10 s)
Single-device value
(Note 2a) at dual operation
(Note 3b)
Single-device
Drain power
operation (Note 3a)
dissipation
(t = 10 s)
Single-device value
(Note 2b) at dual operation
(Note 3b)
Single pulse avalanche energy (Note 4)
Avalanche current
Repetitive avalanche energy Single-device value at dual operation
(Note 2a, 3b, 5)
Channel temperature
Storage temperature range
VDSS VDGR VGSS
ID IDP PD (1)
PD (2)
PD (1)
PD (2)
EAS IAR
EAR
Tch Tstg
20 20 ±12 6 24 1.1
0.75
0.6
0.35
46.8 6
0.075
150 −55 to 150
V V V A
W
W
mJ A mJ °C °C
JEDEC
―
JEITA
―
TOSHIBA
2-3R1E
Weight: 0.035 g (typ.)
Circuit Configuration
8765
1234
Note: (Note 1), (Note 2), (Note 3), (Note 4), (Note 5): See the next page.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Please handle with caution.
1 2009-09-29
Thermal Characteristics
Characteristics
Symbol
Single-device operation
(Note 3a)
Thermal resistance, channel to ambient
(t = 10 s)
(Note 2a) Single-device value at
dual operation
(Note 3b)
Rth (ch-a) (1) Rth (ch-a) (2)
Single-device operation
(Note 3a)
Thermal resistance, channel to ambient
(t = 10 s)
(Note 2b) Single-device value at
dual operation
(Note 3b)
Rth (ch-a) (1) Rth (ch-a) (2)
Max 114 167 208 357
Unit °C/W
°C/W
Marking (Note 6)
S8208
Part No. (or abbreviation code)
TPCS8208
Lot No. Note 7
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2:
a) Device mounted on a glass-epoxy board (a)
FR-4 25.4 × 25.4 × 0.8 (unit: mm)
b) Device mounted on a glass-epoxy board (b)
FR-4 25.4 × 25.4 × 0.8 (unit: mm)
(a) (b)
Note 3:
a) The power dissipation and thermal resistance values are shown for a single device (During single-device opera.