TPCM8001-H

TPCM8001-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII) TPCM8001-H High-Efficiency DC／DC Converter Applications Notebook PC Applications Portable-Equipment Applications 0.5±0.1 Unit: mm 0.8 8 0.25±0.05 0.05 M A 5 4.65±0.3 3.65±0.2 Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 6.0 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 7 mΩ (typ.) High forward transfer admittance: |Yfs| =36 S (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA) 0.75±0.05 0.2＋－00.2 0.166±0.05 14 3.5±0.2 0.55 A 0.05 S S1 4 1.05± 0 .2 0.6±0.1 2.2±0.2 Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Pulsed (Note 1) Drain power dissipation (Tc=25°C) Drain power dissipation (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) (Note 2b) Single-pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Tc=25°C) (Note 4) Channel temperature Storage temperature range Symbol VDSS VDGR VGSS ID IDP PD PD PD EAS IAR EAR Tch Tstg Rating 30 30 ±20 20 60 30 2.3 1.0 104 20 1.8 150 −55 to 150 Unit V V V A W W W mJ A mJ °C °C 2.75±0.2 8 1,2,3：SOURCE 5,6,7,8：DRAIN 0.8±0.1 5 4：GATE JEDEC ― JEITA ― TOSHIBA 2-4L1A Weight: 0.028 g (typ.) Circuit Configuration 8765 1234 Note: ...