TPCS8213
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅣ)
TPCS8213
Lithium Ion Battery Applications
Small footprint due to a small and thin package Low drain-source ON-resistance: RDS (ON) = 8.4 mΩ (typ.) High forward transfer admittance: |Yfs| = 13 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 20 V) Enhancement-mode: ...