TK55D10J1

TK55D10J1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOSⅢ) TK55D10J1 Switching Regulator Applications High-Speed switching Low gate charge: Qg = 110 nC (typ.) Low drain-source ON resistance: RDS (ON) = 8.4 mΩ (typ.) High forward transfer admittance: |Yfs| = 110 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 100 V) Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Unit: mm 10.0±0.3 9.5±0.2 A Ф3.65±0.2 0.6±0.1 3.2 2.8 15.0±0.3 9.0 1.1±0.15 0.75±0.25 2.8Max. 12.8±0.5 Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 100 100 ±20 55 210 140 382 55 9.4 150 −55 to 50 Unit V V V A W mJ A mJ °C °C 0.62±0.15 Ф0.2 M A 2.54 2.54 0.57+-00..2105 2.53±0.2 4.5±0.2 123 1: Gate 2: Drain (Heat Sink) 3: Source JEDEC - JEITA - TOSHIBA 2-10V1A Weight: 1.35 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/curren...