TK07H90A
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOS IV)
TK07H90A
Switching Regulator Application...
TK07H90A
TOSHIBA Field Effect
Transistor Silicon N-Channel MOS Type (π-MOS IV)
TK07H90A
Switching
Regulator Applications
Unit: mm
z Low drain−source ON resistance : RDS (ON) = 1.6Ω (typ.)
z High forward transfer admittance : |Yfs| =5.0 S (typ.)
z Low leakage current
: IDSS = 100 μA (max) (VDS = 720V)
z Enhancement mode
: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain−source voltage
Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage
Drain current
DC (Note 1) Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single-pulse avalanche energy (Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS VDGR VGSS
ID IDP PD
EAS
IAR EAR Tch Tstg
900 900 ±30
7 21 150
491
7 15 150 −55~150
V V V A A W
mJ
A mJ °C °C
1: GATE 2: DRAIN (HEAT SINK) 3: SOURCE
JEDEC
―
JEITA
―
TOSHIBA
2-16K1A
Weight: 3.8 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (...