Document
BL8509D
Low Voltage Detector with Built-in Delay Circuit
Outline:
BL8509D is a series of high precision voltage detector with ultra low current consumption (500nA typ. at VDD=VTH+1V) and a built-in delay circuit. It can work at very low voltage, which makes it perfect for system reset.
BL8509D is composed of high precision voltage reference, comparator, delay circuit, output driver and resistor array. Internally preset detect voltage has a low temperature drift and requires no external trimming.
Two type of output, CMOS and N-channel open-drain are available.
BL8509D is available in SOT-23,SOT-233,SOT-23-5 which is Pb free.
Selection Guide:
Features:
• High-precision detection Voltage: ±2% • Detection Voltage:1.6V~5.0V (in 0.1V steps) • Built-in Power on Reset Delay Time circuit::
Refer to Selection Guide
• Operating Voltage range:1.0V~6.0V • Ultra-low current consumption:0.9uA typ. (at
VDD=3V)
• Two Output forms :CMOS and N-channel open-
drain (Active Low)
Application:
• Power monitor for portable equipment such as
PDA,DSC,Mobile phone,Notebook,MP3
• CPU and Logic Circuit Reset • Battery Checker • Battery Back-up Circuit • Power Failure Detector
8509D- XXX X X XX
Pin Alignment:
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Package type: RM:SOT-23-3 RN:SOT-23-5 RO:SOT-23
Output type: N:Nch C:CMOS
Delay time: A:240mS B:50mS C:100mS D:200mS E:400mS
Detector voltage: 090……0.9V 100……1.0V 263……2.63V 293……2.93V 300……3.0V 465……4.65V
…… 600……6.0V (In 0.1V step)
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Product Mark Information: Top View:VZXYW
Product Name
BL8509D-263 BL8509D-293 BL8509D-263 BL8509D-293
Top Side Mark(VZ)
H1 H2 I1 I2
Output Type
Nchannel Nchannel
CMOS CMOS
Top Side Mark(X) A B C D E
Delay Times
240mS 50mS 100mS 200mS 400mS
Year Y
Week W
Means assembly year and weeks
2010
2011
2012
2013
0123
1 … 26 27
A…Z
BL8509D
… … … 52 …
Pin Description:
SOT-23 1
PIN Number
SOT-23-3 SOT-23-5 13
PIN Name
VSS
Function
GND Pin
22
1
VOUT
Voltage detection output Pin
33 ---
2 VDD 4 NC 5 NC
Voltage input Pin No connection No connection
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Block diagram:
BL8509D
N channel open-drain
CMOS output
Absolute Maximum Ratings:
PARAMETER
SYMBOL
Supply Voltage
VDDmax
Output Voltage
RST,RST
Input Current Output Current Power Dissipation Operating Temperature Storage Temperature
IDD IOUT
PD Topr Tstg
RATING
7 GND-0.3 ~VDDmax+0.3 (CMOS Type)
GND-0.3 ~7 ( Open Drain Type) 20
20 150 (Not attached PCB)
-40 ~ +105 -65 ~ +150
UNIT V V mA mA
mW ℃ ℃
Recommended Work Conditions:
PARAMETER
SYMBOL
Operating Temperature
Topr
RATING -40 ~ +105
UNIT ℃
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Electrical Characteristics:
BL8509D
Parameter Operating voltage
Symbol VDD
Test Condition Ta=0 to 70℃
Ta=-40 to 105℃
MIN. 1.0 1.1
TYP. -
MAX. 6.0 6.0
Unit V
Supply Current
Reset Threshold
Reset Threshold Temp. Coefficient RST output voltage
Low (active L type)
IDD
VTH
VTH/⊿T VOL
VDD=VTH+1V
Ta=25℃
VTH=4.63V Ta=-40 to 85℃ Ta=85 to 105℃
VTH=4.38V
Ta=25℃ Ta=-40 to 85℃ Ta=85 to 105℃
Ta=25℃
VTH=3.08V Ta=-40 to 85℃ Ta=85 to 105℃
Ta=25℃
VTH=2.93V
VTH=2.63V
VTH=1.6~ 5.0V
(0.1V step)
Ta=-40 to 85℃ Ta=85 to 105℃
Ta=25℃ Ta=-40 to 85℃ Ta=85 to 105℃
Ta=25℃ Ta=-40 to 85℃ Ta=85 to 105℃
VDD=VTH-0.1V, Isink=1.2mA VTH≦3.08V
VDD=VTH-0.1V, Isink=3.2mA VTH>3.08V
- 4.584 4.500 4.400 4.336 4.250 4.160 3.049 3.000 2.920 2.901 2.850 2.780 2.604 2.550 2.500 -1.0 -2.5 -5.0
-
-
-
0.5
4.630 -
4.380 -
3.080 -
2.930 -
2.630 -
30
2.0
4.676 4.750 4.860 4.424 4.500 4.560 3.111 3.150 3.230 2.959 3.000 3.080 2.656 2.700 2.760
1.0 2.5 5.0
-
µA
V
% ppm/℃
- 0.3 - 0.4
V
RST output voltage High
(active L type)
VOH
VDD=VTH+1V Isink=500µA VTH≦3.08V
VDD=VTH+1V, Isink=800µA VTH>3.08V
0.8*VDD VDD-1.5
- -
- -
V
RST output voltage low
(active H type)
VOL
VDD=VTH+1V, Isink=1.2mA VTH≦3.08V
VDD=VTH+1V, Isink=3.2mA VTH>3.08V
- - 0.3 V
- - 0.4
RST output voltage High
(active H type)
VOH
VDD=VTH-0.1V Isink=500µA VTH≦3.08V
VDD=VTH-0.1V, Isink=800µA VTH>3.08V
0.8*VDD VDD-1.5
- -
- -
(Note1)This device is tested at Ta=25℃, over temperature limits guaranteed by design only. (Note2)The parameter is guaranteed by design.
V
Circuit ① ②
①
①
③
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BL8509D
Parameter
Reset active timeout period
VDD to Reset Delay
Symbol tdel tTH
Tdel Rank
Ta=-40 to 85℃ A
Ta=85 to 105℃ Ta=-40 to 85℃ B Ta=85 to 105℃ Ta=-40 to 85℃ C Ta=85 to 105℃ Ta=-40 to 85℃ D Ta=85 to 105℃ Ta=-40 to 85℃ E Ta=85 to 105℃ VDD=(VTH+1V) to (VTH-100mV)
(Note2)
MIN.
140 100 35 25 70 49 140 98 280 196
-
TYP.
240 50 -
100 -
200 -
400 -
20
MAX.
310 840 65 98 130 195 260 390 520 780
Unit ms
Circuit ④
- µs
④
Output Leakage Current (active L,open drain type)
ILEAK
VDD=VRST=7V
-
-
0.1 µA
⑤
(Note1) This device is tested at Ta=25℃, over temperature limits guaranteed by design only . (Note2) The parameter is guaranteed by design.
Test Circuit:
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