HBR20200
MAIN CHARACTERISTICS
SCHOTTKY BARRIER DIODE
IF(AV) VRRM Tj VF(max)
20（2×10）A 200 V
175 ℃ 0.75V （@Tj=125℃）...
HBR20200
MAIN CHARACTERISTICS
SCHOTTKY BARRIER DIODE
IF(AV) VRRM Tj VF(max)
20（2×10）A 200 V
175 ℃ 0.75V （@Tj=125℃）
APPLICATIONS
High frequency
switch power
supply
Free wheeling
diodes, polarity
protection
applications
FEATURES
Common cathode structure
，
Low power loss, high
efficiency High Operating
， （RoHS）
Junction Temperature
Guard ring for overvoltage protection，
High reliability
RoHS product
Tianjin Micro Electronic Material Technology Co,.Ltd. TEL： (86) 22-2532 3492
： 16-2 ADD：No.16-2 Xiangan Road TEDA Tianjin China FAX：(86) 22-2521 0431
SCHOTTKY BARRIER DIODE
ABSOLUTE RATINGS（Tc=25℃）
Parameter
Symbol
Repetitive peak reverse voltage
VRRM
Value
200
Unit V
Maximum DC blocking voltage
Average forward current
TC=150℃
(TO-220C, TO-263)
TC=125℃
(TO-220F, TO-220HF)
per device per
diode
VDC IF(AV)
200 20 10
V A
Surge non repetitive forward
current（ 8.3ms — JEDEC
） 8.3 ms single half-sine-wave (JEDEC
IFSM 190 A
Method)
Maximum junction temperature
Tj 175 ℃
Storage temperature range
ELECTRICAL CHARACTERISTICS
TSTG
-40~+150
℃
Parameter
IR
VF
Tests conditions
Tj =25℃ Tj =125℃ Tj =25℃ Tj =125℃
VR=VRRM IF=10A
Value(min)
Value(typ)
0.83 0.68
THERMAL CHARACTERISTICS
Value(max)
10 6 0.93 0.75
Unit μA mA
V V
Parameter
Thermal resistance from junction to case
TO-220C TO-263 TO-220HF
Symbol Value(min)
Rth(j-c)
Value(max)
3.0 3.0 3.5
Unit
℃/W
Tianjin Micro Electronic Material ...
