Production specification
Schottky Barrier Rectifier
SBL2030---SBL2060
FEATURES
z Mwtal-Semiconductor Junction with G...
Production specification
Schottky Barrier Rectifier
SBL2030---SBL2060
FEATURES
z Mwtal-Semiconductor Junction with Guardring.
z Epitaxial Construction.
Pb
z
Lead-free Low Forward Voltage Drop,Low Switching Losses.
z High Surge Capability.
z For Use in Low Voltage,High Frequency Inverters Free
Wheeling,and Polarity Protection Applications. z The Plastic Material Carries U/L Recognition 94V-0.
TO-220AC
MAXIMUM RATING operating temperature range applies unless otherwise specified
Symbol Parameter
SBL 2030
SBL 2035
SBL 2040
SBL 2045
SBL 2050
SBL 2060
Unit
VRRM
Recurrent Peak Reverse Voltage
30 35 40 45 50 60 V
VRMS
RMS Reverse Voltage
21 25 28 32 35 42 V
VDC IF(AV) IFSM
DC Blocking Voltage
30 35 40 45 50 60 V
Average Forward Total Device Rectified Current @TA=100℃
Forward Surge Current 8.3ms Single Half Sine-wave Superimosed on Rated Load
20 250
A A
RθJC
Thermal Resistance (Note1)
1.5 ℃/W
Tj Operating Junction Temperature Range
-55 to +125
℃
Tstg StorageTemperature Range Note:1.Thermal resistance from junction to case.
-55 to +150
℃
T009 Rev.B
www.gmicroelec.com 1
Production specification
Schottky Barrier Rectifier
SBL2030---SBL2060
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions
SBL2030- SBL2050SBL2045 SBL2060
MAX
Reverse Current
IR
VR=VRRM,TA=25℃ VR=VRRM,TA=100℃
0.5 50
Forward Voltage
VF IF=20A
0.60 0.70
UNIT mA V
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specifi...