R SCHOTTKY BARRIER DIODE
HBR10150
MAIN CHARACTERISTICS
Package
IF(AV) VRRM Tj VF(max)
10(2×5)A
150 V 175 ℃ 0.72V ...
R
SCHOTTKY BARRIER DIODE
HBR10150
MAIN CHARACTERISTICS
Package
IF(AV) VRRM Tj VF(max)
10(2×5)A
150 V 175 ℃ 0.72V (@Tj=125℃)
z z
APPLICATIONS
z High frequency switch power supply
z Free wheeling diodes, polarity protection applications
z z, z z, z(RoHS)
FEATURES
zCommon cathode structure zLow power loss, high efficiency zHigh Operating Junction
Temperature zGuard ring for overvoltage
protection,High reliability zRoHS product
TO-22O TO-22OBF
TO-22OF TO-22OHF
ORDER MESSAGE
Order codes
Marking
Package
HBR10150Z
HBR10150 TO-220
HBR10150ZR
HBR10150 TO-220
HBR10150F
HBR10150 TO-220F
HBR10150FR
HBR10150 TO-220F
HBR10150BF
HBR10150 TO-220BF
HBR10150BFR HBR10150 TO-220BF
HBR10150HF
HBR10150 TO-220HF
HBR10150HFR HBR10150 TO-220HF
Halogen Free NO YES NO YES NO YES NO YES
Packaging Tube Tube Tube Tube Tube Tube Tube Tube
Device Weight 1.98 g(typ) 1.98 g(typ) 1.70 g(typ) 1.70 g(typ) 1.70 g(typ) 1.70 g(typ) 1.70 g(typ) 1.70 g(typ)
(Rev.):201108J
1/8
R
ABSOLUTE RATINGS (Tc=25℃)
Parameter Repetitive peak reverse voltage
Symbol VRRM
Maximum DC blocking voltage
VDC
Average forward current
TC=150℃ (TO-220) TC=125℃ (TO-220F TO-220BF TO-220HF)
per device
per diode
IF(AV)
Surge non repetitive forward current ( 8.3ms — JEDEC ) 8.3 ms single half-sine-wave (JEDEC Method)
IFSM
Maximum junction temperature
Tj
Storage temperature range
TSTG
HBR10150
Value
150
Unit
V
150 V
10 A
5
120 A
175 -40~+150
...