LRB751G-40T1G

LESHAN RADIO COMPANY, LTD. Schottky barrier diode LRB751G-40T1G zApplications General rectification zFeatures 1) Small power mold type. (SO D-723) 2) Low VF 3) High reliability 4) Pb-Free package is available 5) S- Prefix for Automotive and O ther Applications Req uiring Uniq ue Site and Control Change Req uirements; AE C -Q 101 Q ualified and PPAP Capable. zConstruction Silicon epitaxial planar LRB751G-40T1G S-LRB751G-40T1G 1 2 SOD-723 zAbsolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current Forward current surge peak （60Hz・1cyc） Junction temperature Storage temperature Symbol VRM VR Io IFSM Tj Tstg Limits 40 30 30 200 125 -40 to +125 Unit V V mA mA ℃ ℃ zElectrical characteristic (Ta=25°C) Parameter Forward voltage Reverse current Capacitance between terminals Symbol Min. Typ. Max. VF - - 0.37 IR - - 0.5 Ct - 2 - Unit Conditions V IF=1mA µA VR=30V pF VR=1V , f=1MHz zDEVICE MARKING AND ORDERING INFORMATION Device LRB751G-40T1G S-LRB751G-40T1G Marking 5 Shipping 4000/Tape&Reel Rev.O 1/4 FORWARD CURRENT:IF(mA) FORWARD VOLTAGE:VF(mV) LESHAN RADIO COMPANY, LTD. LRB751G-40T1G , S-LRB751G-40T1G Electricalcharacteristiccurves(Ta=25OC) 100 10 Ta=75℃ Ta=125℃ 1 0.1 Ta=25℃ Ta=-25℃ 0.01 0.001 0 100 200 300 400 500 600 700 800 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 0REVERSE CURRENT:IR(nA) 100000 Ta=125℃ 10000 1000 100 10 Ta=75℃ Ta=25℃ Ta=-25℃ 1 0 5 10 15 20 25 30 35 40 RE...